參數(shù)資料
型號(hào): ACT-E1M32T-080F14T
廠商: Aeroflex Inc.
英文描述: ACT-F1M32 High Speed 32 Megabit Boot Block FLASH Multichip Module
中文描述: 行為F1M32高速啟動(dòng)塊32兆位閃存多芯片模塊
文件頁(yè)數(shù): 2/9頁(yè)
文件大小: 149K
代理商: ACT-E1M32T-080F14T
Aeroflex Circuit Technology
SCD1661B REV A 1/16/97 Plainview NY (516) 694-6700
2
accomplished by chip Enable (CE) and
Output Enable (OE) being logically active.
Access time grades of 80nS, 100nS and
120nS maximum are standard.
The ACT–F1M32 is packaged in a
hermetically sealed co-fired ceramic 68
lead, .94" SQ Ceramic Gull Wing CQFP
package. This allows operation in a military
environment temperature range of -55°C to
+125°C.
The ACT–F1M32 provides program and
erase capability at 5V or 12V and allows
reads with Vcc at 5V or 3.3V(Not tested).
Since many designs read from flash
memory a large percentage of the time,
read operation using 3.3V can provide
great power savings. Consult the factory for
3.3V tested parts. In applications where
read performance is critical, faster access
times are obtainable with the 5V V
CC
part
detailed herein.
For program and erase operations, 5V
Vpp operation eliminates the need for in
system voltage converters. The 12V Vpp
operation provides reduced (approx 60%)
program and erase times where 12V is
available in the system. For design
simplicity, however, connect Vcc and Vpp
to the same 5V ±10% source.
Each block can be independently
erased and programmed 100,000 times at
commercial temperature or 10,000 times at
extended temperature.
The boot block is located at either the
bottom (Standard) or the top (Special
Order) of the address map in order to
accommodate
different
protocols for boot code location. Locking
and unlocking of the boot block is controlled
by WP and/or RP.
Intel's boot block architecture provides a
flexible solution for the different design
needs
of
various
asymmetrically-blocked
allows the integration of several memory
components into a single flash device. The
boot block provides a secure boot PROM;
the
parameter
blocks
EEPROM functionality for parameter store
with proper software techniques; and the
main blocks provide code and data storage
with access times fast enough to execute
code
in
place,
requirements.
For Detail Information regarding the
operation of the 28F800BV Memory die,
see the Intel datasheet (order number
290539-002).
microprocessor
applications.
memory
The
map
can
emulate
decreasing
RAM
General Description, Cont’d
,
SmartDie is a Trademark of Intel Corporation
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ACT-E1M32T-100F14C 制造商:AEROFLEX 制造商全稱:AEROFLEX 功能描述:ACT-F1M32 High Speed 32 Megabit Boot Block FLASH Multichip Module
ACT-E1M32T-100F14I 制造商:AEROFLEX 制造商全稱:AEROFLEX 功能描述:ACT-F1M32 High Speed 32 Megabit Boot Block FLASH Multichip Module
ACT-E1M32T-100F14M 制造商:AEROFLEX 制造商全稱:AEROFLEX 功能描述:ACT-F1M32 High Speed 32 Megabit Boot Block FLASH Multichip Module
ACT-E1M32T-100F14Q 制造商:AEROFLEX 制造商全稱:AEROFLEX 功能描述:ACT-F1M32 High Speed 32 Megabit Boot Block FLASH Multichip Module
ACT-E1M32T-100F14T 制造商:AEROFLEX 制造商全稱:AEROFLEX 功能描述:ACT-F1M32 High Speed 32 Megabit Boot Block FLASH Multichip Module