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參數(shù)資料
| 型號： | AAT1210 |
| 廠商： | Advanced Analog Technology,lnc. |
| 英文描述： | High Power DC/DC Boost Converter with Optional Dynamic Voltage Programming |
| 中文描述： | 高功率DC / DC升壓轉(zhuǎn)換器可選動態(tài)電壓編程 |
| 文件頁數(shù)： | 15/23頁 |
| 文件大小： | 707K |
| 代理商： | AAT1210 |
AAT1210
High Power DC/DC Boost Converter
with Optional Dynamic Voltage Programming
1210.2007.02.1.2
15
Figure 3: Forward Voltage vs. Forward Current
for Various Schottky Diodes.
The average diode current is equal to the output
current.
The average output current multiplied by the for-
ward diode voltage determines the loss of the out-
put diode.
Diode junction temperature can be estimated.
The junction temperature should be maintained
below 110oC, but may vary depending on applica-
tion and/or system guidelines. The diode
θ
JA
can
be minimized with additional PCB area on the cath-
ode. PCB heatsinking the anode may degrade EMI
performance.
The reverse leakage current of the rectifier must be
considered to maintain low quiescent (input) cur-
rent and high efficiency under light load. The recti-
fier reverse current increases dramatically at high
temperatures.
Additional considerations may apply to satisfy short
circuit conditions. A short circuit across the output
terminals results in high currents through the induc-
tor and output diode. The output diode must be
sized to prevent damage and possible failure of the
diode under short circuit conditions. The inductor
may saturate without incurring damage.
When current limit of (3A minimum) is reached,
switching of the low side N-channel MOSFET is
disabled. Although switching is disabled, DC cur-
rent continues to build to a level determined by the
DC resistance in the path of current flow. For
portable applications, the source resistance
(R
SOURCE
) of the Li-ion battery pack is between
100-300m
Ω
and should also be considered.
The AAT1210 controller will generate an over-tem-
perature (OT) event under extended short circuit
conditions. OT disables the high side P-channel
MOSFET, which terminates current flow in the out-
put diode. Current flow continues when OT hys-
teresis (cool-down) is met. This continues until the
short circuit condition is removed. In portable appli-
cations, the battery pack over-current protection
may be enabled prior to an OT event.
I
SHT-CKT(MAX)
=
(V
IN(MAX)
- V
F
)
(R
SOURCE
+ R
DC
+ R
DS(ON)IN
)
T
J
= T
AMB
+
Θ
JA
· P
LOSS_DIODE
P
LOSS_DIODE
= I
AVG
·
V
F
= I
OUT
·
V
F
I
AVG(TOT)
= I
OUT
Forward Voltage (V)
F
10
100
1000
10000
0.00
0.10
0.20
0.30
0.40
0.50
0.60
0.70
B340LA
MBR0530
ZHCS350
BAT42W
Table 1: Typical Surface Mount Schottky Rectifiers for Various Output Levels.
Rated
Forward
Current (A)
Non-Repetitive
Peak Surge
Current (A)
Thermal
Resistance
(
θ
JA
, °C/W)
500
206
330
500
Part
Number
Rated
Voltage (V)
Manufacturer
Case
Diodes, Inc.
ON Semi
Zetex
Central Semi
BAT42W
MBR0530T
ZHCS350
CMDSH2-3
0.2
0.5
0.35
0.2
4.0
5.5
4.2
1.0
30
30
40
30
SOD-123
SOD-123
SOD-523
SOD-323
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| AAT1217ICA-1.2-T1 | 功能描述:開關(guān)變換器、穩(wěn)壓器與控制器 1.2MHz ADJ Step Up Converter RoHS:否 制造商:Skyworks Solutions, Inc. 輸出電壓: 輸出電流: 輸出功率: 輸入電壓: 開關(guān)頻率: 工作溫度范圍: 安裝風(fēng)格: 封裝 / 箱體: 封裝:Reel |
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