參數(shù)資料
型號: 9S12XDP512DGV2
英文描述: Device User Guide for Mask Set L15Y - (Second Silicon - Enhanced Feature Set)
中文描述: 設備用戶指南掩模組L15Y - (二硅-增強的功能集)
文件頁數(shù): 128/152頁
文件大?。?/td> 1231K
代理商: 9S12XDP512DGV2
MC9S12XDP512 Device User Guide V01.12
128
A.3.1.3 Sector Erase
Erasing a 1024 byte Flash sector or a 4 byte EEPROM sector takes:
The setup time can be ignored for this operation.
A.3.1.4 Mass Erase
Erasing a NVM block takes:
The setup time can be ignored for this operation.
A.3.1.5 Blank Check
The time it takes to perform a blank check on the Flash or EEPROM is dependant on the location of the
first non-blank word starting at relative address zero. It takes one bus cycle per word to verify plus a setup
of the command.
Table A-15 NVM Timing Characteristics
Conditions are shown in
Table A-4
unless otherwise noted
Num C
Rating
Symbol
Min
Typ
Max
Unit
1
D External Oscillator Clock (MC9S12XDP512C< V, M)
f
NVMOSC
0.5
80
1
NOTES
:
1. Restrictions for oscillator in crystal mode apply!
2. Minimum Programming times are achieved under maximum NVM operating frequency f
NVMOP
and maximum bus frequency
f
bus
.
MHz
2
D Bus frequency for Programming or Erase Operations
f
NVMBUS
1
MHz
3
D Operating Frequency
f
NVMOP
150
200
kHz
4
P Single Word Programming Time
t
swpgm
46
2
74.5
3
μ
s
5
D Flash Burst Programming consecutive word
4
t
bwpgm
20.4
2
31
3
μ
s
6
D Flash Burst Programming Time for 32 Words
4
t
brpgm
1331.2
2
2027.5
3
μ
s
7
P Sector Erase Time
t
era
20
5
26.7
3
ms
8
P Mass Erase Time
t
mass
100
5
133
3
ms
9
D Blank Check Time Flash per block
t
check
11
6
65546
7
t
cyc
10
D Blank Check Time EEPROM per block
t
check
11
6
2058
7
t
cyc
t
era
4000
1
f
NVMOP
---------------------
t
mass
20000
1
f
NVMOP
---------------------
t
check
location t
cyc
10 t
cyc
+
F
For More Information On This Product,
Go to: www.freescale.com
n
.
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