參數(shù)資料
型號: 935249800518
廠商: NXP SEMICONDUCTORS
元件分類: 存儲器
英文描述: SPECIALTY MEMORY CIRCUIT, PDSO40
封裝: 10.16 MM, PLASTIC, SO-40
文件頁數(shù): 30/30頁
文件大?。?/td> 223K
代理商: 935249800518
1999 Apr 29
9
Philips Semiconductors
Product specication
2.9-Mbit eld memory
SAA4955TJ
Cascade operation
If a longer delay is needed, the total storage depth can be
increased beyond 2949264 bits by cascading several
SAA4955TJs. For details see the interconnection and
timing diagrams (Figs 17 and 18).
Test mode operation
The SAA4955TJ incorporates a test mode not intended for
customer use. If WE and RSTW are held HIGH
continuously for 1024 SWCK clock cycles, the
SAA4955TJ will enter test mode. It will exit test mode if WE
is LOW for a single SWCK cycle or if RSTW is LOW for
2 SWCK clock cycles.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Notes
1. Machine model: equivalent to discharging a 200 pF capacitor through a 0
series resistor (‘0 ’ is actually
0.75
H+10 ).
2. Human body model: equivalent to discharging a 100 pF capacitor through a 1500
series resistor.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDD, VDD(O) supply voltages
0.5
+5
V
VDD(P)
supply voltage for protection circuits
0.5
+5.5
V
VI
input voltage
VDD(P) =5V
0.5
+5.5
V
VDD =VDD(O) =VDD(P) = 3.3 V 0.5
+3.8
V
VO
output voltage
VDD(P) =5V
0.5
+5
V
VDD =VDD(O) =VDD(P) = 3.3 V 0.5
+3.8
V
IDD(tot)
total supply current
200
mA
V
voltage difference between GND,
GNDO and GNDP
0.5
+0.5
V
IO
short circuit output current
50
mA
Ptot
total power dissipation
750
mW
Tstg
storage temperature
20
+150
°C
Tj
junction temperature
0
125
°C
Tamb
ambient temperature
0
70
°C
Ves
electrostatic handling
note 1
150
+200
V
note 2
2000
+2000
V
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth(j-a)
thermal resistance from junction to ambient
in free air
60
K/W
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