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參數(shù)資料
| 型號(hào)： | 935249800518 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 存儲(chǔ)器 |
| 英文描述： | SPECIALTY MEMORY CIRCUIT, PDSO40 |
| 封裝： | 10.16 MM, PLASTIC, SO-40 |
| 文件頁(yè)數(shù)： | 2/30頁(yè) |
| 文件大?。?/td> | 223K |
| 代理商： | 935249800518 |
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1999 Apr 29
10
Philips Semiconductors
Product specication
2.9-Mbit eld memory
SAA4955TJ
CHARACTERISTICS
VDD =VDD(O) =VDD(P) = 3.0 to 3.6 V; Tamb = 0 to 70 °C; 3 ns input transition times; unless otherwise specied.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.(1)
MAX.
UNIT
Supply
VDD, VDD(O) supply voltages (pins 19 and 22)
3.0
3.3
3.6
V
VDD(P)
supply voltage (pins 20 and 21)
3.0
3.3
5.5
V
IDD(tot)
total supply current
(IDD(tot) =IDD +IDD(O) +IDD(P))
minimum write/read
cycle; outputs open
22
70
mA
IDD
operating supply current
minimum write/read cycle
20
60
mA
IDDstd
stand-by supply current
after 1 RSTW/RSTR
cycle; WE, RE and
OE LOW
310
mA
IDD(O)
supply current
minimum write/read
cycle; outputs open
210
mA
IDD(P)
supply current
01
mA
Inputs (pins 3 to 18 and 23 to 26)
VIH
HIGH-level input voltage
2.0
VDD(P) + 0.3 V
VIL
LOW-level input voltage
0.5
+0.8
V
ILI
input leakage current
VI =0VtoVDD(P)
10
+10
A
Ci
input capacitance
f = 1 MHz; VI =0V
7pF
Outputs (pins 27 to 38)
VOH
HIGH-level output voltage
IOH = 5mA
2.4
V
VOL
LOW-level output voltage
IOL = 4.2 mA
0.4
V
ILO
output leakage current
VO =0VtoVDD(Q);
RE and OE LOW
10
+10
A
Co
output capacitance
f = 1 MHz; VO =0V
10
pF
Write cycle timing; note 2
Tcy(SWCK)
SWCK cycle time
see Fig.3
26
ns
tW(SWCKH)
SWCK HIGH pulse width
see Fig.3
7
ns
tW(SWCKL)
SWCK LOW pulse width
see Fig.3
7
ns
tsu(D)
set-up time data inputs
(D0 to D11)
see Fig.3
5
ns
th(D)
hold time data inputs (D0 to D11) see Fig.3
3
ns
tsu(RSTW)
set-up time RSTW
see Fig.3
5
ns
th(RSTW)
hold time RSTW
see Fig.3
3
ns
tsu(WE)
set-up time WE
see Fig.7
5
ns
th(WE)
hold time WE
see Fig.7
3
ns
tW(WEL)
WE LOW pulse width
see Fig.7
8
ns
tsu(IE)
set-up time IE
see Fig.8
5
ns
th(IE)
hold time IE
see Fig.8
3
ns
tW(IEL)
IE LOW pulse width
see Fig.8
8
ns
tt
transition time (rise and fall)
see Fig.3
330
ns
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