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參數(shù)資料
| 型號： | 934056689127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 放大器 |
| 英文描述： | 920 MHz - 960 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER |
| 封裝： | PLASTIC, SOT-365C, 3 PIN |
| 文件頁數(shù)： | 7/14頁 |
| 文件大?。?/td> | 145K |
| 代理商： | 934056689127 |
2003 Feb 26
2
Philips Semiconductors
Product specication
GSM900 EDGE power module
BGF944
FEATURES
Typical GSM EDGE performance at a supply voltage of
26 V:
– Output power = 2.5 W
– Gain = 29 dB
– Efficiency = 15%
– ACPR <
65 dBc at 400 kHz
– rms EVM < 0.4%
– peak EVM < 1.2%
Low distortion to a GSM EDGE signal
Excellent 2-tone performance
Low die temperature due to copper flange
Integrated temperature compensated bias
50 input/output impedance
Flat gain over frequency band.
APPLICATIONS
Base station RF power amplifiers in the 920 to 960 MHz
frequency band
GSM, GSM EDGE, multi carrier applications
Macrocell (driver stage) and Microcell (final stage).
DESCRIPTION
17 W LDMOS power amplifier module for base station
amplifier applications in the 920 to 960 MHz band.
PINNING - SOT365C
PIN
DESCRIPTION
1
RF input
2VS
3
RF output
Flange
ground
23
1
Top view
MBL257
Fig.1 Simplified outline.
QUICK REFERENCE DATA
Typical RF performance at Tmb =25 °C.
Note
1. ACPR 400 kHz at 30 kHz resolution bandwidth.
MODE OF OPERATION
f
(MHz)
VS
(V)
PL
(W)
Gp
(dB)
η
(%)
ACPR
(dBc)
rms EVM
(%)
CW
920 to 960
26
17
28
47
GSM EDGE
920 to 960
26
2.5
29
15
65(1)
0.4
MODE OF OPERATION
f
(MHz)
VS
(V)
PL
(W)
Gp
(dB)
d3
(dB)
d5
(dB)
d7
(dB)
2-tone
920 to 960
26
2.5
29
44
52
60
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