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參數(shù)資料
| 型號： | 934056689127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 放大器 |
| 英文描述： | 920 MHz - 960 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER |
| 封裝： | PLASTIC, SOT-365C, 3 PIN |
| 文件頁數(shù)： | 12/14頁 |
| 文件大?。?/td> | 145K |
| 代理商： | 934056689127 |
2003 Feb 26
7
Philips Semiconductors
Product specication
GSM900 EDGE power module
BGF944
APPLICATION INFORMATION
handbook, halfpage
TEMPERATURE
COMPENSATED
GATE BIAS
C1
C3
C5
R1
L1
C2
C4
+
VS
50
output
50
input
MBL781
Z1
Z2
Fig.10 Test circuit.
List of components (see Figs 10 and 11)
Note
1. The striplines are on a double copper-clad printed-circuit board (RO5880) with
εr = 2.2 and thickness = 0.79 mm.
COMPONENT
DESCRIPTION
VALUE
CATALOGUE
NUMBER
C1, C3
multilayer X7R ceramic chip capacitor
100 nF; 50 V
C2, C5
tantalum SMD capacitor
10
F; 35 V
C4
electrolytic capacitor
100
F; 35 V
L1
grade 4S2 Ferroxcube bead
4330 030 36300
R1
metal lm resistor
2322 195 13109
Z1, Z2
stripline; note 1
50
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