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參數資料
| 型號： | 934056689127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 放大器 |
| 英文描述： | 920 MHz - 960 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER |
| 封裝： | PLASTIC, SOT-365C, 3 PIN |
| 文件頁數： | 5/14頁 |
| 文件大小： | 145K |
| 代理商： | 934056689127 |
Philips Semiconductors - PIP - BGF944; GSM900 EDGE power module
Product Information
BGF944; GSM900
EDGE power
module
Information as of 2003-04-22
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Download datasheet
Block diagram
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topGeneral description
17 W LDMOS power amplifier module for base station amplifier applications in the 920 to 960 MHz band.
topFeatures
q
Typical GSM EDGE performance at a supply voltage of 26 V:
r
Output power = 2.5 W
r
Gain = 29 dB
r
Efficiency = 15pct
r
ACPR < -65 dBc at 400 kHz
r
rms EVM < 0.4pct
r
peak EVM < 1.2pct
q
Low distortion to a GSM EDGE signal
q
Excellent 2-tone performance
q
Low die temperature due to copper flange
q
Integrated temperature compensated bias
q
50 Ohm input/output impedance
q
Flat gain over frequency band.
topApplications
q
Base station RF power amplifiers in the 920 to 960 MHz frequency band
q
GSM, GSM EDGE, multi carrier applications
q
Macrocell (driver stage) and Microcell (final stage).
topDatasheet
Page count File size
(kB)
Datasheet
BGF944
GSM900 EDGE
power module
2/26/2003
Product specification 12
91
file:///G|/imaging/BITTING/CPL/20030424/04232003_9/PHGL/_HTML04232003/BGF944.html (1 of 2) [May-07-2003 5:45:04 PM]
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