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參數(shù)資料
| 型號： | 934056689127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 放大器 |
| 英文描述： | 920 MHz - 960 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER |
| 封裝： | PLASTIC, SOT-365C, 3 PIN |
| 文件頁數(shù)： | 6/14頁 |
| 文件大?。?/td> | 145K |
| 代理商： | 934056689127 |
Philips Semiconductors - PIP - BGF944; GSM900 EDGE power module
topParametrics
Type
number
Package Description POWER
GAIN(dB)
Application Efficiency(%) LOAD
POWER(W)
Frequency(MHz) Operating
voltage(VDC)
BGF944
SOT365C
Basestation
LDMOS
RF
POWER
Module
29
EDGE
Driver
Module
47@CW
15@EDGE
17 (CW) /
2.5 (avg
EDGE)
920 - 960
26
topProducts, packages, availability and ordering
BGF944
9340 566 89127
Standard Marking *
Horizontal, Rail Pack
Full production
-
topSimilar products
BGF944 links to the similar products page containing an overview of products that are similar in function or related to
the type number(s) as listed on this page. The similar products page includes products from the same catalog tree(s),
relevant selection guides and products from the same functional category.
topSupport & tools
RF & Microwave Power transistors and RF power modules(date 15-Aug-02)
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相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 934056690115 | L BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR |
| 934056691115 | L BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR |
| 934056692127 | 198 A, 40 V, 0.0059 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 934056694118 | 198 A, 40 V, 0.0059 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 934056696127 | 198 A, 40 V, 0.0059 ohm, N-CHANNEL, Si, POWER, MOSFET |
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| 934057052412 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Logic level four-quadrant triac |
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