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參數(shù)資料
| 型號： | 934056013127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 29 A, 55 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | PLASTIC, TO-220F, FULLPACK-3 |
| 文件頁數(shù)： | 9/13頁 |
| 文件大?。?/td> | 283K |
| 代理商： | 934056013127 |
Philips Semiconductors
BUK7720-55A
TrenchMOS standard level FET
Product specication
Rev. 01 — 19 Feb 2001
5 of 13
9397 750 08003
Philips Electronics N.V. 2001. All rights reserved.
8.
Characteristics
Table 5:
Characteristics
Tj =25 °C unless otherwise specied
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS drain-source breakdown voltage
ID = 0.25 mA; VGS =0V
Tj =25 °C55
V
Tj = 55 °C50
V
VGS(th)
gate-source threshold voltage
Tj =25 °C
234V
Tj = 150 °C1
V
Tj = 55 °C
4.4
V
IDSS
drain-source leakage current
VDS =55V; VGS =0V
Tj =25 °C
0.05
10
A
Tj = 150 °C
500
A
IGSS
gate-source leakage current
VGS = ±20 V; VDS =0V
2
100
nA
RDSon
drain-source on-state resistance
Tj =25 °C
15
20
m
Tj = 150 °C
37
m
Dynamic characteristics
Ciss
input capacitance
1200 1592 pF
Coss
output capacitance
290
356
pF
Crss
reverse transfer capacitance
180
240
pF
td(on)
turn-on delay time
VDD =30V; RL = 1.2 ; VGS =10V;
RG =10 ;
15
ns
tr
rise time
74
ns
td(off)
turn-off delay time
70
ns
tf
fall time
40
ns
Ld
internal drain inductance
measured from drain lead from package to
centre of die
4.5
nH
Ls
internal source inductance
measured from source lead from package to
source bond pad
7.5
nH
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