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參數(shù)資料
| 型號(hào)： | 934056013127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 29 A, 55 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | PLASTIC, TO-220F, FULLPACK-3 |
| 文件頁(yè)數(shù)： | 10/13頁(yè) |
| 文件大小： | 283K |
| 代理商： | 934056013127 |
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Philips Semiconductors
BUK7720-55A
TrenchMOS standard level FET
Product specication
Rev. 01 — 19 Feb 2001
6 of 13
9397 750 08003
Philips Electronics N.V. 2001. All rights reserved.
Source-drain diode
VSD
source-drain (diode forward)
voltage
0.95
1.2
V
trr
reverse recovery time
IS = 20 A; dIS/dt = 100 A/s; VGS = 10 V;
VDS =30V
45
ns
Qr
recovered charge
110
nC
Table 5:
Characteristics…continued
Tj =25 °C unless otherwise specied
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Tj =25 °CTj =25 °C; ID =25A
Fig 5.
Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 6.
Drain-source on-state resistance as a function
of gate-source voltage; typical values.
Tj =25 °C
Fig 7.
Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8.
Normalized drain-source on-state resistance
factor as a function of junction temperature.
0
20
40
60
80
100
120
140
160
180
200
02
46
8
10
VDS (V)
ID
VGS (V) =
20
14
12
11
10
9.0
8.5
8.0
7.5
7.0
6.0
6.5
5.5
5.0
4.5
(A)
03nc63
03nc62
10
15
20
25
30
5
1015
2025
VGS (V)
RDSon
(m
)
03nc64
15
20
25
30
35
40
45
0
50
100
150
ID (A)
RDSon
(m
)
10
8
7
5.5
6
6.5
VGS (V) =
03nc24
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
-60
-20
20
60
100
140
180
T
j
(
o
C)
a
a
R
DSon
R
DSon 25 C
°
()
----------------------------
=
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