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參數(shù)資料
| 型號： | 934056013127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 29 A, 55 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | PLASTIC, TO-220F, FULLPACK-3 |
| 文件頁數(shù)： | 12/13頁 |
| 文件大小： | 283K |
| 代理商： | 934056013127 |
Philips Semiconductors
BUK7720-55A
TrenchMOS standard level FET
Product specication
Rev. 01 — 19 Feb 2001
8 of 13
9397 750 08003
Philips Electronics N.V. 2001. All rights reserved.
VDS =25V
Tj =25 °C; ID =25A
Fig 13. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
Fig 14. Gate-source voltage as a function of turn-on
gate charge; typical values.
VGS =0V
Fig 15. Reverse diode current as a function of reverse diode voltage; typical values.
03ne22
0
20
40
60
80
100
120
02
46
8
10
VGS (V)
ID
(A)
Tj = 150
oC
Tj = 25
oC
03nc59
0
2
4
6
8
10
0
10203040
QG (nC)
VGS
(V)
VDD = 44 V
VDD = 14 V
03ne23
0
20
40
60
80
100
0.0
0.5
1.0
1.5
VSD (V)
IS
(A)
Tj = 25
oC
Tj = 150
oC
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