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參數(shù)資料
| 型號(hào)： | 934056023118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 66 A, 55 V, 0.017 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, SMD, D2PAK-3 |
| 文件頁(yè)數(shù)： | 1/9頁(yè) |
| 文件大?。?/td> | 107K |
| 代理商： | 934056023118 |
Philips Semiconductors
Product specification
TrenchMOS
transistor
BUK9516-55A
Logic level FET
BUK9616-55A
GENERAL DESCRIPTION
QUICK REFERENCE DATA
N-channel enhancement mode logic
SYMBOL
PARAMETER
MAX.
UNIT
level field-effect power transistor in a
plastic
envelope
available
in
V
DS
Drain-source voltage
55
V
TO220AB and SOT404 . Using
I
D
Drain current (DC)
66
A
’trench’ technology which features
P
tot
Total power dissipation
138
W
very low on-state resistance. It is
T
j
Junction temperature
175
C
intended for use in automotive and
R
DS(ON)
Drain-source on-state
general
purpose
switching
resistance
V
GS = 5 V
16
m
applications.
V
GS = 10 V
15
m
PINNING
TO220AB & SOT404
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
gate
2
drain
3
source
tab/mb drain
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
DS
Drain-source voltage
-
55
V
DGR
Drain-gate voltage
R
GS = 20 k
-55
V
±V
GS
Gate-source voltage
-
10
V
±V
GSM
Non-repetitive gate-source voltage
t
p≤50S
-
15
V
I
D
Drain current (DC)
T
mb = 25 C
-
66
A
I
D
Drain current (DC)
T
mb = 100 C
-
46
A
I
DM
Drain current (pulse peak value)
T
mb = 25 C
-
263
A
P
tot
Total power dissipation
T
mb = 25 C
-
138
W
T
stg, Tj
Storage & operating temperature
-
- 55
175
C
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
R
th j-mb
Thermal resistance junction to
-
1.1
K/W
mounting base
R
th j-a
Thermal resistance junction to
in free air
60
-
K/W
ambient(TO220AB)
R
th j-a
Thermal resistance junction to
Minimum footprint, FR4
50
-
K/W
ambient(SOT404)
board
1 23
tab
13
mb
2
SOT404
TO220AB
BUK9616-55A
BUK9516-55A
d
g
s
May 2000
1
Rev 1.000
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