- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄24702 > 934056022127 (NXP SEMICONDUCTORS) 66 A, 55 V, 0.017 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB PDF資料下載
參數(shù)資料
| 型號(hào)： | 934056022127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 66 A, 55 V, 0.017 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | PLASTIC, SC-46, 3 PIN |
| 文件頁(yè)數(shù)： | 1/9頁(yè) |
| 文件大?。?/td> | 107K |
| 代理商： | 934056022127 |
Philips Semiconductors
Product specification
TrenchMOS
transistor
BUK9516-55A
Logic level FET
BUK9616-55A
GENERAL DESCRIPTION
QUICK REFERENCE DATA
N-channel enhancement mode logic
SYMBOL
PARAMETER
MAX.
UNIT
level field-effect power transistor in a
plastic
envelope
available
in
V
DS
Drain-source voltage
55
V
TO220AB and SOT404 . Using
I
D
Drain current (DC)
66
A
’trench’ technology which features
P
tot
Total power dissipation
138
W
very low on-state resistance. It is
T
j
Junction temperature
175
C
intended for use in automotive and
R
DS(ON)
Drain-source on-state
general
purpose
switching
resistance
V
GS = 5 V
16
m
applications.
V
GS = 10 V
15
m
PINNING
TO220AB & SOT404
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
gate
2
drain
3
source
tab/mb drain
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
DS
Drain-source voltage
-
55
V
DGR
Drain-gate voltage
R
GS = 20 k
-55
V
±V
GS
Gate-source voltage
-
10
V
±V
GSM
Non-repetitive gate-source voltage
t
p≤50S
-
15
V
I
D
Drain current (DC)
T
mb = 25 C
-
66
A
I
D
Drain current (DC)
T
mb = 100 C
-
46
A
I
DM
Drain current (pulse peak value)
T
mb = 25 C
-
263
A
P
tot
Total power dissipation
T
mb = 25 C
-
138
W
T
stg, Tj
Storage & operating temperature
-
- 55
175
C
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
R
th j-mb
Thermal resistance junction to
-
1.1
K/W
mounting base
R
th j-a
Thermal resistance junction to
in free air
60
-
K/W
ambient(TO220AB)
R
th j-a
Thermal resistance junction to
Minimum footprint, FR4
50
-
K/W
ambient(SOT404)
board
1 23
tab
13
mb
2
SOT404
TO220AB
BUK9616-55A
BUK9516-55A
d
g
s
May 2000
1
Rev 1.000
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 05WS6 | surface mount silicon Zener diodes |
| 934056024127 | 39 A, 100 V, 0.043 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 934056025118 | 39 A, 100 V, 0.043 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 934056026127 | 37 A, 100 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 934056027118 | 37 A, 100 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 934056255127 | 制造商:NXP Semiconductors 功能描述:Trans MOSFET N-CH 55V 54A 3-Pin(3+Tab) TO-220AB Tube |
| 934056947115 | 制造商:NXP Semiconductors 功能描述:Trans GP BJT NPN 15V 0.2A 4-Pin(3+Tab) SOT-89 T/R |
| 934056954118 | 制造商:NXP Semiconductors 功能描述:Trans MOSFET N-CH 60V 34A 3-Pin(2+Tab) D2PAK T/R |
| 934057052116 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Logic level four-quadrant triac |
| 934057052126 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Logic level four-quadrant triac |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。