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參數(shù)資料
| 型號(hào)： | 934056023118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 66 A, 55 V, 0.017 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, SMD, D2PAK-3 |
| 文件頁(yè)數(shù)： | 4/9頁(yè) |
| 文件大?。?/td> | 107K |
| 代理商： | 934056023118 |
Philips Semiconductors
Product specification
TrenchMOS
transistor
BUK9516-55A
Logic level FET
BUK9616-55A
Fig.5. Typical output characteristics, T
j = 25 C.
I
D = f(VDS); parameter VGS
Fig.6. Typical on-state resistance, T
j = 25 C.
R
DS(ON) = f(ID); parameter VGS
Fig.7. Typical on-state resistance, T
j = 25 C.
R
DS(ON) = f(VGS); conditions ID = 25 A;
Fig.8. Typical transfer characteristics.
I
D = f(VGS) ; conditions: VDS = 25 V; parameter Tj
Fig.9. Typical transconductance, T
j = 25 C.
g
fs = f(ID); conditions: VDS = 25 V
Fig.10. Normalised drain-source on-state resistance.
a = R
DS(ON)/RDS(ON)25 C = f(Tj); ID = 25 A; VGS = 5 V
0
20
40
60
80
100
02468
10
VDS/V
ID/A
2.2
2.4
2.6
3.0
3.2
3.4
3.6
VGS / V =
2.8
4.0
5.0
6.0
10.0
0
20
40
60
80
100
012345
VGS / V
ID/A
25
Tj / C= 175
10
12
14
16
18
20
22
20
30
40
50
60
70
80
90
100
ID / A
5.0
4.6
4.2
4.0
3.6
3.4
VGS / V =
RDS(ON) / mOhm
0
10
20
30
40
50
60
0
20406080
100
ID / A
gfs / S
10
15
20
25
30
35
23456789
10
VGS / V
RDS(ON) / mOhm
-100
-50
0
50
100
150
200
0.5
1
1.5
2
2.5
Tmb / degC
Rds(on) normlised to 25degC
May 2000
4
Rev 1.000
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