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| 型號(hào)： | 934055519215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 40 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236AB |
| 封裝： | PLASTIC, SMD, SST3, 3 PIN |
| 文件頁數(shù)： | 9/12頁 |
| 文件大?。?/td> | 75K |
| 代理商： | 934055519215 |
2000 Jan 05
6
Philips Semiconductors
Product specication
N-channel junction FET
BF862
handbook, halfpage
1
30
20
10
0
0.8
0
typ
min
0.6
0.4
0.2
MCD813
VGS (V)
ID
(mA)
max
Fig.7
Drain current as a function of gate-source
voltage; typical values.
VDS = 8 V; Tj =25 °C.
handbook, halfpage
20
04
12
0
8
4
8
12
16
MCD814
VDS (V)
ID
(mA)
VGS = 0 V
0.1 V
0.2 V
0.3 V
0.4 V
0.5 V
Fig.8
Drain current as a function of drain-source
voltage; typical values.
VDS = 8 V; Tj =25 °C.
handbook, halfpage
25
0
510
15
VDG (V)
IG
(nA)
20
104
102
1
102
104
MCD815
10 mA
1 mA
0.1 mA
IGSS
ID = 20 mA
Fig.9
Gate current as a function of drain-gate
voltage; typical values.
VDS = 8 V; Tj =25 °C.
handbook, halfpage
8
6
40
Cis
Crs
VGS (V)
C
(pF)
12
0
4
8
2
MCD816
Fig.10 Input and reverse transfer capacitance as
functions of gate-source voltage; typical
values.
VDS = 8 V; f = 1 MHz; Tj =25 °C.
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