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參數(shù)資料
| 型號： | 934055519215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 40 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236AB |
| 封裝： | PLASTIC, SMD, SST3, 3 PIN |
| 文件頁數(shù)： | 6/12頁 |
| 文件大?。?/td> | 75K |
| 代理商： | 934055519215 |
2000 Jan 05
3
Philips Semiconductors
Product specication
N-channel junction FET
BF862
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Main heat transfer is via the gate lead.
THERMAL CHARACTERISTICS
Note
1. Soldering point of the gate lead.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
drain-source voltage
20
V
VDG
drain-gate voltage
20
V
VGS
gate-source voltage
20
V
IDS
drain-source current
40
mA
IG
forward gate current
10
mA
Ptot
total power dissipation
Ts ≤ 90 °C; note 1
300
mW
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
150
°C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-s
thermal resistance from junction to soldering
point
note 1
200
K/W
handbook, halfpage
040
Ts (°C)
Ptot
(mW)
80
160
400
300
100
0
200
120
MCD808
Fig.2 Power derating curve.
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