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參數(shù)資料
| 型號(hào)： | 934055519215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 40 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236AB |
| 封裝： | PLASTIC, SMD, SST3, 3 PIN |
| 文件頁數(shù)： | 7/12頁 |
| 文件大?。?/td> | 75K |
| 代理商： | 934055519215 |
2000 Jan 05
4
Philips Semiconductors
Product specication
N-channel junction FET
BF862
STATIC CHARACTERISTICS
Tj =25 °C; unless otherwise specied.
DYNAMIC CHARACTERISTICS
Common source; Tamb =25 °C; VGS = 0; VDS = 8 V; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V(BR)GSS
gate-source breakdown voltage
IGS = 1 A; VDS =0
20
V
VGS
gate-source forward voltage
VDS = 0; IG =1mA
1V
VGSoff
gate-source cut-off voltage
VDS =8V; ID =1 A
0.3
0.8
1.2
V
IGSS
reverse gate current
VGS = 15 V; VDS =0
1nA
IDSS
drain-source current
VGS = 0; VDS =8V
10
25
mA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
yfs
common source forward transfer
admittance
Tj =25 °C35
45
mS
gos
common source output conductance
Tj =25 °C
180
400
S
Ciss
input capacitance
f = 1 MHz
10
pF
Crss
reverse transfer capacitance
f = 1 MHz
1.9
pF
en
equivalent noise input voltage
f = 100 kHz
0.8
nV/
√Hz
fT
transition frequency
715
MHz
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