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參數(shù)資料
| 型號： | 934055519215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 40 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236AB |
| 封裝： | PLASTIC, SMD, SST3, 3 PIN |
| 文件頁數(shù)： | 8/12頁 |
| 文件大?。?/td> | 75K |
| 代理商： | 934055519215 |
2000 Jan 05
5
Philips Semiconductors
Product specication
N-channel junction FET
BF862
handbook, halfpage
0
0.5
1
VGSoff (V)
IDSS
(mA)
1.5
40
30
10
0
20
MCD809
Fig.3
Drain saturation current as a function of
gate-source cut-off voltage; typical values.
VDS = 8 V; Tj =25 °C.
handbook, halfpage
0
300
200
100
0
10
20
30
MCD810
IDSS (mA)
gos
(
S)
Fig.4
Common-source output conductance as a
function of drain saturation current;
typical values.
VDS = 8 V; Tj =25 °C.
handbook, halfpage
010
20
IDSS (mA)
yfs
(mS)
30
60
50
30
20
40
MCD811
Fig.5
Forward transfer admittance as a function
of drain saturation current; typical values.
VDS = 8 V; Tj =25 °C.
handbook, halfpage
0
60
40
20
0
10
20
30
MCD812
ID (mA)
yfs
(mS)
Fig.6
Forward transfer admittance as a function
of drain current; typical values.
VDS = 8 V; Tj =25 °C.
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