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參數(shù)資料
| 型號(hào)： | 934054967118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 52 A, 40 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, SMD, D2PAK-5 |
| 文件頁數(shù)： | 5/9頁 |
| 文件大?。?/td> | 85K |
| 代理商： | 934054967118 |
Philips Semiconductors
Product specification
PowerMOS transistor
BUK9120-48TC
Voltage clamped logic level FET with temperature sensing diodes
Fig.9. Typical transfer characteristics.
I
D = f(VGS) ; conditions: VDS = 25 V; parameter Tj
Fig.10. Typical transconductance, T
j = 25 C.
g
fs = f(ID); conditions: VDS = 25 V
Fig.11. Typical clamping voltage
V
(CL)DSR = f(ID); conditions: RG = 10 kOhm
Fig.12. Typical clamping voltage
V
(CL)DSR = f(RG); conditions: ID = 10 A
Fig.13. Typical Vf of sense diodes
Vf = f(K); parameter I
f
Fig.14. Typical Vf temperature coefficient
Vf Temp.Coef.= f(K); conditions: I
F = 250 uA
012
34
56
0
20
40
60
80
100
ID/A
VGS/V
Tj/C = 175
25
0
5
10
15
43
44
45
46
47
48
49
50
V(CL)DSR/V
RG/kOhm
Tmb / degC =
175
25
-55
0
20
406080
100
0
10
20
30
40
50
gfs/S
ID/A
-50
0
50
100
150
200
0.3
0.4
0.5
0.6
0.7
0.8
0.9
Vf/V
Diode Temperature /C
If/uA =
500
250
100
50
25
02
46
8
10
12
40
41
42
43
44
45
46
47
48
V(CL)DSR/V
ID/A
Tmb / degC =
175
25
-55
0
50
100
150
-1.55
-1.5
-1.45
-1.4
-1.35
-1.3
-1.25
Vf Temperature Coefficient / mV/K
Diode Temperature /C
February 1998
5
Rev 1.100
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