參數(shù)資料
型號(hào): 934054967118
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: 52 A, 40 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: PLASTIC, SMD, D2PAK-5
文件頁數(shù): 6/9頁
文件大?。?/td> 85K
代理商: 934054967118
Philips Semiconductors
Product specification
PowerMOS transistor
BUK9120-48TC
Voltage clamped logic level FET with temperature sensing diodes
Fig.15. Normalised drain-source on-state resistance.
a = R
DS(ON)/RDS(ON)25 C = f(Tj); ID = 25 A; VGS = 5 V
Fig.16. Gate threshold voltage.
V
GS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS
Fig.17. Sub-threshold drain current.
I
D = f(VGS); conditions: Tj = 25 C; VDS = VGS
Fig.18. Typical capacitances, C
iss, Coss, Crss.
C = f(V
DS); conditions: VGS = 0 V; f = 1 MHz
Fig.19. Typical turn-on gate-charge characteristics.
V
GS = f(QG); conditions: ID = 50 A; parameter VDS
Fig.20. Typical reverse diode current.
I
F = f(VSDS); conditions: VGS = 0 V; parameter Tj
-100
-50
0
50
100
150
200
0.5
1
1.5
2
2.5
BUK959-60
Tmb / degC
Rds(on) normlised to 25degC
0.01
0.1
1
10
100
0
1
2
3
4
5
6
Thousands
pF
Ciss
Coss
Crss
VDS/V
BUK959-60
-100
-50
0
50
100
150
200
0
0.5
1
1.5
2
2.5
Tj / C
VGS(TO) / V
max.
typ.
min.
0
10203040
0
1
2
3
4
5
6
VGS/V
QG/nC
VDS = 14V
VDS = 35V
0
0.5
1
1.5
2
2.5
3
1E-05
1E-04
1E-03
1E-02
1E-01
Sub-Threshold Conduction
2%
typ
98%
0
0.5
1
1.5
2
0
20
40
60
80
100
IF/A
VSDS/V
Tj/C =
175
25
February 1998
6
Rev 1.100
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