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參數(shù)資料
| 型號： | 934054967118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 52 A, 40 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, SMD, D2PAK-5 |
| 文件頁數(shù)： | 4/9頁 |
| 文件大?。?/td> | 85K |
| 代理商： | 934054967118 |
Philips Semiconductors
Product specification
PowerMOS transistor
BUK9120-48TC
Voltage clamped logic level FET with temperature sensing diodes
Fig.3. Normalised power dissipation.
PD% = 100
P
D/PD 25 C = f(Tmb)
Fig.4. Normalised continuous drain current.
ID% = 100
I
D/ID 25 C = f(Tmb); conditions: VGS ≥ 5 V
Fig.5. Safe operating area. T
mb = 25 C
I
D & IDM = f(VDS); IDM single pulse; parameter tp
Fig.6. Transient thermal impedance.
Z
th j-mb = f(t); parameter D = tp/T
Fig.7. Typical output characteristics, T
j = 25 C.
I
D = f(VDS); parameter VGS
Fig.8. Typical on-state resistance, T
j = 25 C.
R
DS(ON) = f(ID); parameter VGS
0
20
40
60
80
100
120
140
160
180
Tmb / C
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
1E-06
0.0001
0.01
1
100
0.001
0.01
0.1
1
10
D =
tp
T
P
t
D
0.5
0.2
0.1
0.05
0.02
0
Zth/(K/W)
t/s
0
20
40
60
80
100
120
140
160
180
Tmb / C
ID%
Normalised Current Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
024
68
10
0
50
100
150
ID/A
VDS/V
VGS/V =
5
4.8
4.6
4.4
4.2
4.0
3.8
3.6
3.4
3.2
3.0
2.8
2.6
2.4
2.2
10
8
6
1
10
100
1
10
100
1000
ID/A
VDS/V
RDS(ON) =VDS/ID
DC
tp =
1 us
10us
100 us
1 ms
10ms
100ms
Self Clamped
0
2040
6080
100
0.005
0.01
0.015
0.02
0.025
0.03
RDS(ON)/mOhm
ID/A
3
VGS/V =
3.5
4
4.5
5
6
February 1998
4
Rev 1.100
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