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參數(shù)資料
| 型號： | 934054967118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 52 A, 40 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, SMD, D2PAK-5 |
| 文件頁數(shù)： | 2/9頁 |
| 文件大小： | 85K |
| 代理商： | 934054967118 |
Philips Semiconductors
Product specification
PowerMOS transistor
BUK9120-48TC
Voltage clamped logic level FET with temperature sensing diodes
ESD LIMITING VALUE
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
C
Electrostatic discharge voltage, Human body model (100pF,1.5K
)-
2
kV
pins 1,3,5
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
R
th j-mb
Thermal resistance junction to
-
1.29
K/W
mounting base
R
th j-a
Thermal resistance junction to
minimum footprint,
-
50
-
K/W
ambient
FR4 board
STATIC CHARACTERISTICS
T
j = 25 C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
(BR)DG
Drain-gate zener voltage
250uA; -55C < T
j < 175C
38
43
V
GS(TO)
Gate threshold voltage
V
DS = VGS; ID = 1 mA;
1.0
1.5
2.0
V
T
j = 175C
0.5
-
V
T
j = -55C
-
2.3
V
I
DSS
Zero gate voltage drain current
V
DS = +35 V; VGS = 0 V;
-
0.1
100
A
T
j =175 C
-
250
A
I
DSS
Zero gate voltage drain current
V
DS = +15 V; VGS = 0 V;
-
0.004
2
A
T
j =175 C
-
250
A
I
GSS
Gate source leakage current
V
GS = ±5 V; VDS = 0 V;
-
0.02
1
A
T
j =175 C
-
10
A
±V
(BR)GSS
Gate source breakdown voltage
±1 mA;
10
-
V
R
DS(ON)
Drain-source on-state
V
GS = 5 V; ID = 20 A
-
16
20
m
resistance
T
j =175 C
-
42
m
V
F
Forward voltage, temperature
I
F = 250 uA;
685
710
735
mV
sense diodes
-S
F
Negative temperature
I
F = 250 uA
1.26
1.4
1.54
mV/K
coefficient, temperature sense
diodes from 25 C to 140 C
V
HYS
Forward voltage hysteresis;
I
F = 125 uA to 250uA
25
50
mV
temperature sense diodes
February 1998
2
Rev 1.100
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