參數(shù)資料
型號： 71V3557SA85BG8
廠商： INTEGRATED DEVICE TECHNOLOGY INC
元件分類： SRAM
英文描述： 128K X 36 ZBT SRAM, 8.5 ns, PBGA119
封裝： 14 X 22 MM, POWER, PLASTIC, BGA-119
文件頁數(shù)： 25/28頁
文件大小： 511K
代理商： 71V3557SA85BG8
6.42
6
IDT71V3557, IDT71V3559, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with
ZBT Feature, 3.3V I/O, Burst Counter, and Flow-Through Outputs
Commercial and Industrial Temperature Ranges
Absolute Maximum Ratings (1)
100 TQFP Capacitance(1)
(TA = +25°C, F = 1.0MHZ)
Pin Configuration 256K x 18
NOTES:
1. Pins14,64,and66donothavetobeconnecteddirectlytoVSSaslongastheinputvoltage
is < VIL.
2. Pin 16 does not have to be connected directly to VDD as long as the input voltage
is > VIH.
3. Pins 83 and 84 are reserved for future 8M and 16M respectively.
4. Pin 64 supports ZZ (sleep mode) for the latest die revisions.
Top View
100 TQFP
NOTE:
1. This parameter is guaranteed by device characterization, but not production tested.
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated
in the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
2. VDD terminals only.
3. VDDQ terminals only.
4. Input terminals only.
5. I/O terminals only.
6. This is a steady-state DC parameter that applies after the power supply has
reached its nominal operating value. Power sequencing is not necessary;
however, the voltage on any input or I/O pin cannot exceed VDDQ during power
supply ramp up.
7. TA is the "instant on" case temperature.
100 99 98 97969594939291 90
8786858483 8281
89 88
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
A
6
A
7
C
E
1
C
E
2
N
C
N
C
B
W
2
B
W
1
C
E
2
V
D
V
S
C
LK
R
/W
C
E
N
O
E
A
D
V
/LD
N
C
(3
)
N
C
(3
)
A
8
A
9
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
N
C
LB
O
A
15
A
14
A
13
A
12
A
11
V
D
V
S
A
0
A
1
A
2
A
3
A
4
A
5
NC
VDDQ
VSS
NC
I/OP2
I/O15
I/O14
VSS
VDDQ
I/O13
I/O12
VSS
VDD
I/O11
I/O10
VDDQ
VSS
I/O9
I/O8
NC
VSS
VDDQ
NC
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
NC
VDDQ
VSS
NC
I/OP1
I/O7
I/O6
VSS
VDDQ
I/O5
I/O4
VSS
VDD
I/O3
I/O2
VDDQ
VSS
I/O1
I/O0
NC
VSS
VDDQ
NC
5282 drw 02a
VSS(1)
NC
VDD(2)
NC
A
16
A
17
NC
VSS(1)
A10
VSS/ZZ(1,4)
,
N
C
N
C
N
C
Symbol
Rating
Commercial &
Industrial Values
Unit
VTERM(2)
Terminal Voltage with
Respect to GND
-0.5 to +4.6
V
VTERM(3,6)
Terminal Voltage with
Respect to GND
-0.5 to VDD
V
VTERM(4,6)
Terminal Voltage with
Respect to GND
-0.5 to VDD +0.5
V
VTERM(5,6)
Terminal Voltage with
Respect to GND
-0.5 to VDDQ +0.5
V
TA(7)
Commercial
Operating Temperature
-0 to +70
oC
Industrial
Operating Temperature
-40 to +85
oC
TBIAS
Temperature
Under Bias
-55 to +125
oC
TSTG
Storage
Temperature
-55 to +125
oC
PT
Power Dissipation
2.0
W
IOUT
DC Output Current
50
mA
5282 tbl 06
Symbol
Parameter(1)
Conditions
Max.
Unit
CIN
Input Capacitance
VIN = 3dV
5
pF
CI/O
I/O Capacitance
VOUT = 3dV
7
pF
5282 tbl 07
Symbol
Parameter(1)
Conditions
Max.
Unit
CIN
Input Capacitance
VIN = 3dV
7
pF
CI/O
I/O Capacitance
VOUT = 3dV
7
pF
5282 tbl 07a
119 BGA Capacitance(1)
(TA = +25°C, F = 1.0MHZ)
Symbol
Parameter(1)
Conditions
Max.
Unit
CIN
Input Capacitance
VIN = 3dV
TBD
pF
CI/O
I/O Capacitance
VOUT = 3dV
TBD
pF
5282 tbl 07b
119 BGA Capacitance(1)
(TA = +25°C, F = 1.0MHZ)
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