參數(shù)資料
型號(hào)： 71V25761S183PF8
廠(chǎng)商： INTEGRATED DEVICE TECHNOLOGY INC
元件分類(lèi)： SRAM
英文描述： 128K X 36 CACHE SRAM, 3.3 ns, PQFP100
封裝： 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100
文件頁(yè)數(shù)： 22/22頁(yè)
文件大?。?/td> 618K
代理商： 71V25761S183PF8
6.42
IDT71V25761, IDT71V25781, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with
2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect
Commercial and Industrial Temperature Ranges
9
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range(1)
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range (VDD = 3.3V ± 5%)
Figure 2. Lumped Capacitive Load, Typical Derating
Figure 1. AC Test Load
AC Test Load
AC Test Conditions
(VDDQ = 2.5V)
NOTES:
1. All values are maximum guaranteed values.
2. At f = fMAX, inputs are cycling at the maximum frequency of read cycles of 1/tCYC while
ADSC = LOW; f=0 means no input lines are changing.
3. For I/Os VHD = VDDQ - 0.2V, VLD = 0.2V. For other inputs VHD = VDD - 0.2V, VLD = 0.2V.
VDDQ/2
50
I/O
Z0 =50
5297 drw 06
,
1
2
3
4
20 30 50
100
200
tCD
(Typical, ns)
Capacitance (pF)
80
5
6
5297 drw 07
,
Symbol
Parameter
Test Conditions
Min.
Max.
Unit
|ILI|
Input Leakage Current
VDD = Max., VIN = 0V to VDD
___
5 A
|ILZZ|
ZZ,
LBO and JTAG Input Leakage Current(1)
VDD = Max., VIN = 0V to VDD
___
30
A
|ILO|
Output Leakage Current
VOUT = 0V to VDDQ, Device Deselected
___
5 A
VOL
Output Low Voltage
IOL = +6mA, VDD = Min.
___
0.4
V
VOH
Output High Voltage
IOH = -6mA, VDD = Min.
2.0
___
V
5297 tbl 08
Symbol
Parameter
Test Conditions
200MHz
183MHz
166MHz
Unit
Com'l Only
Com'l
Ind
Com'l
Ind
IDD
Operating Power Supply
Current
Device Selected, Outputs Open, VDD = Max.,
VDDQ = Max., VIN > VIH or < VIL, f = fMAX(2)
360
340
350
320
330
mA
ISB1
CMOS Standby Power
Supply Current
Device Deselected, Outputs Open, VDD = Max.,
VDDQ = Max., VIN > VHD or < VLD, f = 0(2,3)
30
35
30
35
mA
ISB2
Clock Running Power
Supply Current
Device Deselected, Outputs Open, VDD = Max.,
VDDQ = Max., VIN > VHD or < VLD, f = fMAX(2,3)
130
120
130
110
120
mA
IZZ
Full Sleep Mode Supply
Current
ZZ > VHD, VDD = Max.
30
35
30
35
mA
5297 tbl 09
Input Pulse Levels
Input Rise/Fall Times
Input Timing Reference Levels
Output Timing Reference Levels
AC Test Load
0 to 2.5V
2ns
(VDDQ/2)
See Figure 1
5297 tbl 10
NOTE:
1. The
LBO, TMS, TDI, TCK and TRST pins will be internally pulled to VDD and the ZZ pin will be internally pulled to VSS if they are not actively driven in the application.
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71V25761S183PFG 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 128Kx36 SYNC 3.3V PIPELINED BURST 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪(fǎng)問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
71V25761S183PFG8 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 128Kx36 SYNC 3.3V PIPELINED BURST 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪(fǎng)問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
71V25761S183PFGI 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 128Kx36 SYNC 3.3V PIPELINED BURST 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪(fǎng)問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
71V25761S183PFGI8 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 4Mb PB靜態(tài)隨機(jī)存取存儲(chǔ)器 128K x 36 w/2.5V I/O Pipeline RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪(fǎng)問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
71V25761S200BG 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 128Kx36 SYNC 3.3V PIPELINED BURST 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪(fǎng)問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
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