參數(shù)資料
型號： 71V25761S183PF8
廠商： INTEGRATED DEVICE TECHNOLOGY INC
元件分類： SRAM
英文描述： 128K X 36 CACHE SRAM, 3.3 ns, PQFP100
封裝： 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100
文件頁數(shù)： 17/22頁
文件大?。?/td> 618K
代理商： 71V25761S183PF8
6.42
4
IDT71V25761, IDT71V25781, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with
2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect
Commercial and Industrial Temperature Ranges
100 pin TQFP Capacitance
(TA = +25°C, f = 1.0MHz)
Recommended DC Operating
Conditions
RecommendedOperating
Temperature and Supply Voltage
Absolute Maximum Ratings(1)
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated
in the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
2. VDD terminals only.
3. VDDQ terminals only.
4. Input terminals only.
5. I/O terminals only.
6. This is a steady-state DC parameter that applies after the power supplies have
ramped up. Power supply sequencing is not necessary; however, the voltage
on any input or I/O pin cannot exceed VDDQ during power supply ramp up.
7. TA is the "instant on" case temperature.
NOTES:
1. VIH (max) = VDDQ + 1.0V for pulse width less than tCYC/2, once per cycle.
2. VIL (min) = -1.0V for pulse width less than tCYC/2, once per cycle.
NOTE:
1. This parameter is guaranteed by device characterization, but not production tested.
Symbol
Rating
Commercial &
Industrial
Unit
VTERM(2)
Terminal Voltage with
Respect to GND
-0.5 to +4.6
V
VTERM(3,6)
Terminal Voltage with
Respect to GND
-0.5 to VDD
V
VTERM(4,6)
Terminal Voltage with
Respect to GND
-0.5 to VDD +0.5
V
VTERM(5,6)
Terminal Voltage with
Respect to GND
-0.5 to VDDQ +0.5
V
TA(7)
Commercial
Operating Temperature
-0 to +70
oC
Industrial
Operating Temperature
-40 to +85
oC
TBIAS
Temperature
Under Bias
-55 to +125
oC
TSTG
Storage
Temperature
-55 to +125
oC
PT
Power Dissipation
2.0
W
IOUT
DC Output Current
50
mA
5297 tbl 03
Grade
Temperature(1)
VSS
VDD
VDDQ
Commercial
0°C to +70°C
0V
3.3V±5%
2.5V±5%
Industrial
-40°C to +85°C
0V
3.3V±5%
2.5V±5%
5297 tbl 04
Symbol
Parameter
Min.
Typ.
Max.
Unit
VDD
Core Supply Voltage
3.135
3.3
3.465
V
VDDQ
I/O Supply Voltage
2.375
2.5
2.625
V
VSS
Supply Voltage
0
V
VIH
Input High Voltage -
Inputs
1.7
____
VDD
+0.3
V
VIH
Input High Voltage - I/O
1.7
____
VDDQ
+0.3(1)
V
VIL
Input Low Voltage
-0.3(2)
____
0.7
V
5297 tbl 05
Symbol
Parameter(1)
Conditions
Max.
Unit
CIN
Input Capacitance
VIN = 3dV
5
pF
CI/O
I/O Capacitance
VOUT = 3dV
7
pF
5297 tbl 07
NOTES:
1. TA is the "instant on" case temperature.
119 BGA Capacitance
(TA = +25°C, f = 1.0MHz)
Symbol
Parameter
(1)
Conditions
Max.
Unit
CIN
Input Capacitance
VIN = 3dV
7
pF
CI/O
I/O Capacitance
VOUT = 3dV
7
pF
5297 tbl 07a
165 fBGA Capacitance
(TA = +25°C, f = 1.0MHz)
Symbol
Parameter
(1)
Conditions
Max.
Unit
CIN
Input Capacitance
VIN = 3dV
7
pF
CI/O
I/O Capacitance
VOUT = 3dV
7
pF
5297 tb l 07b
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