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參數(shù)資料
| 型號(hào)： | 71V016SA12PHGI8 |
| 廠商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分類： | SRAM |
| 英文描述： | 64K X 16 STANDARD SRAM, 12 ns, PDSO44 |
| 封裝： | 0.400 INCH, ROHS COMPLIANT, TSOP2-44 |
| 文件頁數(shù)： | 5/9頁 |
| 文件大?。?/td> | 283K |
| 代理商： | 71V016SA12PHGI8 |
6.42
5
IDT71V016SA, 3.3V CMOS Static RAM
1 Meg (64K x 16-Bit)
Commercial and Industrial Temperature Ranges
71V016SA10(2)
71V016SA12
71V016SA15
71V016SA20
Symbol
Parameter
Min.Max.Min.Max.
Min.
Max.Min.Max.
Unit
READ CYCLE
tRC
Read Cycle Time
10
____
12
____
15
____
20
____
ns
tAA
Address Access Time
____
10
____
12
____
15
____
20
ns
tACS
Chip Select Access Time
____
10
____
12
____
15
____
20
ns
tCLZ(1)
Chip Select Low to Output in Low-Z
4
____
4
____
5
____
5
____
ns
tCHZ(1)
Chip Select High to Output in High-Z
____
5
____
6
____
6
____
8ns
tOE
Output Enable Low to Output Valid
____
5
____
6
____
7
____
8ns
tOLZ(1)
Output Enable Low to Output in Low-Z
0
____
0
____
0
____
0
____
ns
tOHZ(1)
Output Enable High to Output in High-Z
____
5
____
6
____
6
____
8ns
tOH
Output Hold from Address Change
4
—
4
—
4
—
4
—
ns
tBE
Byte Enable Low to Output Valid
—
5
—
6
—
7
____
8ns
tBLZ(1)
Byte Enable Low to Output in Low-Z
0
____
0
____
0
____
0
____
ns
tBHZ(1)
Byte Enable High to Output in High-Z
____
5
____
6
____
6
____
8ns
WRITE CYCLE
tWC
Write Cycle Time
10
____
12
____
15
____
20
____
ns
tAW
Address Valid to End of Write
7
____
8
____
10
____
12
____
ns
tCW
Chip Select Low to End of Write
7
____
8
____
10
____
12
____
ns
tBW
Byte Enable Low to End of Write
7
____
8
____
10
____
12
____
ns
tAS
Address Set-up Time
0
____
0
____
0
____
0
____
ns
tWR
Address Hold from End of Write
0
____
0
____
0
____
0
____
ns
tWP
Write Pulse Width
7
____
8
____
10
____
12
____
ns
tDW
Data Valid to End of Write
5
____
6
____
7
____
9
____
ns
tDH
Data Hold Time
0
____
0
____
0
____
0
____
ns
tOW(1)
Write Enable High to Output in Low-Z
3
____
3
____
3
____
3
____
ns
tWHZ(1)
Write Enable Low to Output in High-Z
____
5
____
6
____
6
____
8ns
3834 tbl 10
Timing Waveform of Read Cycle No. 1(1,2,3)
NOTES:
1. WE is HIGH for Read Cycle.
2. Deviceiscontinuouslyselected,CSisLOW.
3. OE, BHE, and BLE are LOW.
AC Electrical Characteristics (VDD= Min. to Max., Commercial and Industrial Temperature Ranges)
DATAOUT
ADDRESS
3834 drw 06
tRC
tAA
tOH
DATAOUT VALID
PREVIOUS DATAOUT VALID
NOTES:
1. This parameter is guaranteed with the AC Load (Figure 2) by device characterization, but is not production tested.
2. 0
°C to +70°C temperature range only.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 71V016SA12PHI | 制造商:Integrated Device Technology Inc 功能描述:SRAM Chip Async Single 3.3V 1M-Bit 64K x 16 12ns 44-Pin TSOP-II Tube |
| 71V016SA12PHI8 | 制造商:Integrated Device Technology Inc 功能描述:SRAM Chip Async Single 3.3V 1M-Bit 64K x 16 12ns 44-Pin TSOP-II T/R |
| 71V016SA12YG | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 64Kx16 ASYNCHRONOUS 3.3V STATIC RAM RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| 71V016SA12YG8 | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 64Kx16 ASYNCHRONOUS 3.3V STATIC RAM RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| 71V016SA12YGI | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 64Kx16 ASYNCHRONOUS 3.3V STATIC RAM RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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