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參數(shù)資料
| 型號(hào)： | 6MBI225U4-170 |
| 廠商： | FUJI ELECTRIC CO LTD |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | IGBT MODULE |
| 中文描述： | 300 A, 1700 V, N-CHANNEL IGBT |
| 封裝： | MODULE-29 |
| 文件頁數(shù)： | 4/14頁 |
| 文件大?。?/td> | 519K |
| 代理商： | 6MBI225U4-170 |
H04-004-03a
MS5F6306
14
a
4
3.Absolute Maximum Ratings ( at Tc= 25°C unless otherwise specified
）
Tc=25°C
Tc=80°C
Tc=25°C
Tc=80°C
(*1) All terminals should be connected together when isolation test will be done.
(*2) Two thermistor terminals should be connected together, each other terminals should be connected together
and shorted to base plate when isolation test will be done.
(*3) Recommendable Value : Mounting 2.5~3.5 Nm (M5 or M6)
(*4) Recommendable Value : Terminals 3.5~4.5 Nm (M6)
4. Electrical characteristics ( at Tj= 25°C unless otherwise specified)
(*5) Biggest internal terminal resistance among arm.
Lead resistance,
terminal-chip(*5)
ton
tr
tr (i)
VGE(th)
Collector-Emitter
saturation voltage
Input capacitance
trr
Turn-on time
Turn-off time
Forward on voltage
Reverse recovery time
Items
Zero gate voltage
Collector current
Gate-Emitter
leakage current
Gate-Emitter
threshold voltage
Tj= 25°C
Tj=125°C
4.5
VCE = 20V
Ic = 225mA
Tj= 25°C
Tj=125°C
VGE=15V
VGE=0V
VCE(sat)
(terminal)
Cies
VCE=10V,VGE=0V,f=1MHz
Vcc = 900V
Ic = 225A
VGE=±15V
toff
tf
VCE(sat)
(chip)
Ic = 225A
μ
s
IF = 225A
-
-
IF = 225A
0.18
0.6
Tj= 25°C
Tj=125°C
-
-
2.05
2.25
2.40
-
V
2.00
1.80
2.15
-
μ
s
1.50
0.30
0.09
1.20
0.60
-
Items
Symbols
Conditions
VCES
VGES
Collector-Emitter voltage
Gate-Emitter voltage
V
V
±20
300
225
600
450
1700
AC : 1min.
1ms
1 device
225
450
1040
150
Ic
Icp
1ms
Continuous
Collector current
Junction temperature
Storage temperature
Collector Power Dissipation
-Ic
Tj
min.
Characteristics
typ.
-40 ~ +125
A
°C
W
Isolation
voltage
max.
3400
VAC
4.5
3.5
N m
Units
Viso
-Ic pulse
Pc
Tstg
Screw
Torque
-
Mounting (*3)
Terminals (*4)
Symbols
VGE=±20V
VCE = 0V
Conditions
VGE = 0V
VCE = 1700V
IGES
ICES
nA
3.0
mA
600
6.5
-
-
-
V
-
8.5
V
Units
-
-
-
-
2.25
2.65
21
0.62
0.39
2.40
-
-
Maximum
Ratings
-
-
2.60
3.00
2.75
-
-
-
-
0.05
0.55
-
-
VF
(terminal)
VF
(chip)
nF
Tj= 25°C
Tj=125°C
-
1.00
Rg = 2.2
Ω
-
I
between terminal and copper base (*1)
between thermistor and others (*2)
m
Ω
R lead
T
Resistance
R
T=25
o
C
T=100
o
C
T=25/50
o
C
B value
B
-
5000
495
3375
-
Ω
465
3305
520
3450
K
a
a
a
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