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參數(shù)資料
| 型號(hào)： | 5962-8852511YX |
| 廠商： | E2V TECHNOLOGIES PLC |
| 元件分類： | PROM |
| 英文描述： | 32K X 8 EEPROM 5V, 250 ns, CQCC32 |
| 封裝： | CERAMIC, LCC-32 |
| 文件頁數(shù)： | 21/27頁 |
| 文件大?。?/td> | 649K |
| 代理商： | 5962-8852511YX |
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3
0006K–PEEPR–01/08
AT28C256
3.
Block Diagram
4.
Device Operation
4.1
Read
The AT28C256 is accessed like a Static RAM. When CE and OE are low and WE is high, the
data stored at the memory location determined by the address pins is asserted on the outputs.
The outputs are put in the high impedance state when either CE or OE is high. This dual-line
control gives designers flexibility in preventing bus contention in their system.
4.2
Byte Write
A low pulse on the WE or CE input with CE or WE low (respectively) and OE high initiates a write
cycle. The address is latched on the falling edge of CE or WE, whichever occurs last. The data is
latched by the first rising edge of CE or WE. Once a byte write has been started it will automati-
cally time itself to completion. Once a programming operation has been initiated and for the
duration of t
WC, a read operation will effectively be a polling operation.
4.3
Page Write
The page write operation of the AT28C256 allows 1 to 64 bytes of data to be written into the
device during a single internal programming period. A page write operation is initiated in the
same manner as a byte write; the first byte written can then be followed by 1 to 63 additional
bytes. Each successive byte must be written within 150 s (t
BLC) of the previous byte. If the tBLC
limit is exceeded the AT28C256 will cease accepting data and commence the internal program-
ming operation. All bytes during a page write operation must reside on the same page as
defined by the state of the A6 - A14 inputs. For each WE high to low transition during the page
write operation, A6 - A14 must be the same.
The A0 to A5 inputs are used to specify which bytes within the page are to be written. The bytes
may be loaded in any order and may be altered within the same load period. Only bytes which
are specified for writing will be written; unnecessary cycling of other bytes within the page does
not occur.
4.4
DATA Polling
The AT28C256 features DATA Polling to indicate the end of a write cycle. During a byte or page
write cycle an attempted read of the last byte written will result in the complement of the written
data to be presented on I/O7. Once the write cycle has been completed, true data is valid on all
outputs, and the next write cycle may begin. DATA Polling may begin at anytime during the write
cycle.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 5962-8852512XX | 32K X 8 EEPROM 5V, 200 ns, CDIP28 |
| 5962-8852502UX | 32K X 8 EEPROM 5V, 300 ns, PGA28 |
| 5962-8852505YX | 32K X 8 EEPROM 5V, 250 ns, CQCC32 |
| 5962-8852512UA | 32K X 8 EEPROM 5V, 200 ns, CPGA28 |
| 5962-8854503YA | 64K X 4 STANDARD SRAM, 55 ns, CDFP28 |
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參數(shù)描述 |
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| 596288534012A | 制造商:NATIONAL 功能描述:New |
| 5962-8853701GA | 制造商:Linear Technology 功能描述:AMPLIFIER-OP AMP |
| 5962-8853701PA | 制造商:Analog Devices 功能描述: |
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