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參數(shù)資料
| 型號： | 3SK186 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N-Channel Dual Gate MOS FET |
| 中文描述： | 硅N溝道雙柵場效應(yīng)晶體管 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 31K |
| 代理商： | 3SK186 |
3SK186
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DS
V
G1S
V
G2S
I
D
Pch
12
V
Gate 1 to source voltage
±
10
±
10
V
Gate 2 to source voltage
V
Drain current
35
mA
Channel power dissipation
150
mW
Channel temperature
Tch
125
°
C
°
C
Storage temperature
Tstg
–55 to +125
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSX
12
—
—
V
V
G1S
= V
G2S
= –5 V,
I
D
A
I
G1
=
±
10
μ
A, V
G2S
= V
DS
= 0
Gate 1 to source breakdown
voltage
V
(BR)G1SS
±
10
—
—
V
Gate 2 to source breakdown
voltage
V
(BR) G2SS
±
10
—
—
V
I
G2
=
±
10
μ
A, V
G1S
= V
DS
= 0
Gate 1 cutoff current
I
G1SS
I
G2SS
—
—
±
100
±
100
nA
V
G1S
=
±
8 V, V
G2S
= V
DS
= 0
V
G2S
=
±
8 V, V
G1S
= V
DS
= 0
V
DS
= 6 V, V
G2S
= 3V,
I
D
μ
A
V
DS
= 6 V, V
G1S
= 3V,
I
D
μ
A
V
DS
= 6 V, V
G2S
= 3V, V
G1S
= 0
V
DS
= 6 V, V
G2S
= 3V,
I
D
V
DS
= 6 V, V
G2S
= 3V,
I
D
Gate 2 cutoff current
—
—
nA
Gate 1 to source cutoff voltage V
G1S(off)
+0.5
—
–0.8
V
Gate 2 to source cutoff voltage V
G2S(off)
+0.5
—
–0.8
V
Drain current
I
DSS
|y
fs
|
0
—
4
mA
Forward transfer admittance
15
—
—
mS
Input capacitance
Ciss
—
1.7
2.2
pF
Output capacitance
Coss
—
1.0
1.4
pF
Reverse transfer capacitance
Crss
—
0.017
0.03
pF
Power gain
PG
16
19
—
dB
V
DS
= 4 V, V
G2S
= 3V,
I
D
Noise figure
Note:
NF
—
3.0
4.5
dB
Marking is “FI–”.
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