參數(shù)資料
型號: 2SK3934
廠商: Toshiba Corporation
英文描述: TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSVI)
中文描述: 東芝場效應晶體管硅?頻道馬鞍山類型(- MOSVI)
文件頁數(shù): 4/6頁
文件大?。?/td> 75K
代理商: 2SK3934
2SK3934
2004-12-03
4
DRAIN
SOURCE VOLTAGE V
DS
(V)
C – V
DS
C
10
0.1
100
1000
10000
1
10
100
CASE TEMPERATURE Tc (°C)
R
DS (ON)
– Tc
D
S
R
D
)
160
40
0
40
80
120
80
1000
800
600
400
200
0
TOTAL GATE CHARGE Q
g
(nC)
DYNAMIC INPUT/OUTPUT
CHARACTERISTICS
D
S
D
G
V
t
CASE TEMPERATURE Tc (°C)
V
th
– Tc
0
80
1
2
3
5
40
0
40
80
120
160
4
D
D
CASE TEMPERATURE Tc (°C)
P
D
– Tc
80
40
0
0
40
80
120
160
20
60
DRAIN
SOURCE VOLTAGE V
DS
(V)
I
DR
– V
DS
D
D
0
0.1
1
10
100
0.8
1.2
1.6
0.4
0
60
80
100
500
400
0
40
20
8
4
16
20
0
COMMON SOURCE
VGS
=
10 V
PULSE TEST
ID
=
15A
7.5
3.8
COMMON SOURCE
VDS
=
10 V
ID
=
1 mA
PULSE TEST
COMMON SOURCE
VGS
=
0 V
f
=
1 MHz
Tc
=
25°C
Ciss
Coss
Crss
COMMON SOURCE
Tc
=
25°C
PULSE TEST
5
3
1
VGS
=
0 V
10
G
S
G
VDS
VGS
VDD
=
100 V
200V
400V
COMMON SOURCE
ID
=
15 A
Tc
=
25°C
PULSE TEST
12
300
200
100
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