參數(shù)資料
型號(hào): 2SK3934
廠商: Toshiba Corporation
英文描述: TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSVI)
中文描述: 東芝場(chǎng)效應(yīng)晶體管硅?頻道馬鞍山類(lèi)型(- MOSVI)
文件頁(yè)數(shù): 1/6頁(yè)
文件大?。?/td> 75K
代理商: 2SK3934
2SK3934
2004-12-03
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (
2SK3934
-MOSVI)
Switching Regulator Applications
Low drain-source ON resistance: R
DS (ON)
= 0.23
High forward transfer admittance: |Y
fs
| =8.2 S (typ.)
Low leakage current: I
DSS
= 100
Enhancement-mode: V
th
= 2.0~4.0 V (V
DS
= 10 V, I
D
= 1 mA)
Maximum Ratings
(Ta
=
25°C)
(typ.)
A (V
DS
= 500 V)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
V
DSS
V
DGR
V
GSS
I
D
500
V
Drain-gate voltage (R
GS
=
20 k
)
500
V
Gate-source voltage
±
30
V
DC
(Note 1)
15
Drain current
Pulse (t
=
1 ms)
(Note 1)
I
DP
60
A
Drain power dissipation (Tc
=
25°C)
P
D
50
W
Single pulse avalanche energy
(Note 2)
E
AS
1.08
J
Avalanche current
I
AR
15
A
Repetitive avalanche energy (Note 3)
E
AR
5.0
mJ
Channel temperature
T
ch
150
°C
Storage temperature range
T
stg
-55~150
°C
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
R
th (ch-c)
2.5
°C/W
Thermal resistance, channel to ambient
R
th (ch-a)
62.5
°C/W
Note 1: Please use devices on conditions that the channel temperature is below 150°C.
Note 2: V
DD
=
90 V, T
ch
=
25°C(initial), L
=
8.16mH, I
AR
=
15 A, R
G
=
25
Note 3: Repetitive rating: Pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
Unit: mm
1: Gate
2: Drain
3: Source
JEDEC
JEITA
SC-67
TOSHIBA
2-10U1B
Weight : 1.7 g (typ.)
1
3
2
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