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參數(shù)資料
| 型號： | 2SK4026 |
| 廠商： | Toshiba Corporation |
| 元件分類： | 基準(zhǔn)電壓源/電流源 |
| 英文描述： | RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS |
| 中文描述： | 抗輻射高效，5安培開關(guān)穩(wěn)壓器 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 216K |
| 代理商： | 2SK4026 |
2SK4026
2006-11-08
1
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (
π
-MOS V)
2SK4026
Switching Regulator Applications
Features
Low drain-source ON-resistance: R
DS (ON)
= 6.4
Ω
(typ.)
High forward transfer admittance: |Y
fs
| = 0.85 S (typ.)
Low leakage current: I
DSS
= 100
μ
A
(max) (V
DSS
= 600 V)
Enhancement mode: V
th
= 2.0 to 4.0 V (V
DS
= 10 V, I
D
= 1 mA)
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
V
DSS
600
V
Drain-gate voltage (R
GS
=
20 k
Ω
)
V
DGR
600
V
Gate-source voltage
V
GSS
±
30
V
DC
(Note 1)
I
D
1
Drain current
Pulse (Note 1)
I
DP
2
A
Drain power dissipation (Tc
=
25°C)
P
D
20
W
Single pulse avalanche energy
(Note 2)
E
AS
56
mJ
Avalanche current
I
AR
1
A
Repetitive avalanche energy (Note 3)
E
AR
2
mJ
Channel temperature
T
ch
150
°C
Storage temperature range
T
stg
55 to 150
°C
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristic
Symbol
Max
Unit
Thermal resistance, channel to case
R
th (ch-c)
6.25
°C/W
Thermal resistance, channel to ambient
R
th (ch-a)
125
°C/W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: V
DD
=
90 V, T
ch
=
25°C, L
=
100 mH, I
AR
=
1 A, R
G
=
25
Ω
Note 3: Repetitive rating; pulse width limited by max channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-7J2B
Weight: 0.36 g (typ.)
０．６±０．１５
０．８ MAX．
２
１
２
３
１．1 MAX．
０．６±０．１５
０．６ MAX
０．６ MAX．
１．１±０．２
６．５±０．２
５
１
２．３
２．３
５
５．２±０．２
０．９
４
１
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