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參數(shù)資料
| 型號(hào)： | 2SK4042 |
| 廠商： | Toshiba Corporation |
| 元件分類(lèi)： | 基準(zhǔn)電壓源/電流源 |
| 英文描述： | RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS |
| 中文描述： | 抗輻射高效，5安培開(kāi)關(guān)穩(wěn)壓器 |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大?。?/td> | 245K |
| 代理商： | 2SK4042 |
2SK4042
2007-10-01
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (
π
-MOSVI)
2SK4042
Switching Regulator Applications
Low drain-source ON resistance: R
DS (ON)
= 0.7
Ω
(typ.)
High forward transfer admittance: |Y
fs
| = 6.5S (typ.)
Low leakage current: I
DSS
= 100
μ
A (V
DS
= 500 V)
Enhancement mode: V
th
= 2.0~4.0 V (V
DS
= 10 V, I
D
= 1 mA)
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
V
DSS
500
V
Drain-gate voltage (R
GS
=
20 k
Ω
)
V
DGR
500
V
Gate-source voltage
V
GSS
±
30
V
DC
(Note 1)
I
D
8
Drain current
Pulse (t
=
1 ms)
(Note 1)
I
DP
32
A
Drain power dissipation (Tc
=
25°C)
P
D
40
W
Single pulse avalanche energy
(Note 2)
E
AS
312
mJ
Avalanche current
I
AR
8
A
Repetitive avalanche energy (Note 3)
E
AR
4
mJ
Channel temperature
T
ch
150
°C
Storage temperature range
T
stg
-55~150
°C
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/’’Derating Concept and
Methods’’) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
R
th (ch-c)
3.125
°C/W
Thermal resistance, channel to ambient
R
th (ch-a)
62.5
°C/W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: V
DD
=
90 V, T
ch
=
25°C(initial), L
=
8.3 mH, I
AR
=
8 A, R
G
=
25
Ω
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
Unit: mm
1: Gate
2: Drain
3: Source
JEDEC
―
JEITA
SC-67
TOSHIBA
2-10U1B
Weight : 1.7 g (typ.)
1
3
2
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