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參數(shù)資料
| 型號： | 2SK4059TK |
| 廠商： | Toshiba Corporation |
| 英文描述： | Silicon N Channel Junction Type For ECM |
| 中文描述： | 硅?頻道聯(lián)合類型流腦 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 154K |
| 代理商： | 2SK4059TK |
2SK4059TK
2007-11-01
1
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK4059TK
For ECM
Application for compact ECM
Absolute Maximum Ratings
(Ta=25°C)
Characteristic
Symbol
Rating
Unit
Gate-Drain voltage
Gate Current
Drain power dissipation (Ta
=
25
°
C)
Junction Temperature
Storage temperature range
V
GDO
I
G
P
D
T
j
T
stg
-20
10
100
125
V
mA
mW
°
C
°
C
55~125
Note:
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
IDSS CLASSIFICATION
A-Rank 140~240μA
B-Rank 210~350μA
BK-Rank 210~400μA
C-Rank 320~500μA
Marking
Equivalent Circuit
Unit: mm
JEDEC
-
JEITA
-
TOSHIBA
2-1R1A
Weight: 2.2mg (typ.)
TESM3
1.Drain
2.Source
3.Gate
D
G
S
IDSS
Classification Symbol
A :A
-
Rank
B :B
-
Rank
C :C
-
Rank
Type Name
8
BK-Rank
1
0
1
2
3
0
0
0.8±0.05
0
1.2±0.05
0
0
0
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