參數(shù)資料
型號(hào): 2SK3639-ZK
廠商: NEC Corp.
英文描述: SWITCHING N-CHANNEL POWER MOSFET
中文描述: 開(kāi)關(guān)N溝道功率MOSFET
文件頁(yè)數(shù): 6/7頁(yè)
文件大?。?/td> 148K
代理商: 2SK3639-ZK
Data Sheet D15967EJ3V0DS
6
2SK3639
PACKAGE DRAWING (Unit: mm)
TO-252 (MP-3ZK)
6.5
±
0.2
5.1 TYP.
4.3 MIN.
2.3
±
0.1
0.5
±
0.1
0.76
±
0.12
0 to 0.25
0.5
±
0.1
1.0
No Plating
No Plating
1
6
±
0
0
4
.
0
1
1
4
2
3
1.14 MAX.
2.3
2.3
1. Gate
2. Drain
3. Source
4. Fin (Drain)
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Drain
Remark
Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately
degrade the device operation. Steps must be taken to stop generation of static electricity as much as
possible, and quickly dissipate it once, when it has occurred.
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