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MOS FIELD EFFECT TRANSISTOR
2SK3639
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No. D15967EJ3V0DS00 (3rd edition)
Date Published January 2005 NS CP(K)
Printed in Japan
2002
The mark
shows major revised points.
DESCRIPTION
The 2SK3639 is N-channel MOS FET device that
features a low on-state resistance and excellent switching
characteristics, and designed for low voltage high current
applications such as DC/DC converter with synchronous
rectifier.
FEATURES
Low on-state resistance
R
DS(on)1
= 5.5 m
MAX. (V
GS
= 10 V, I
D
= 32 A)
R
DS(on)2
= 8.5 m
MAX. (V
GS
= 4.5 V, I
D
= 32 A)
Low C
iss
: C
iss
= 2400 pF TYP.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
20
V
Gate to Source Voltage (V
DS
= 0 V)
V
GSS
±20
V
Drain Current (DC) (T
C
= 25°C)
Drain Current (pulse)
Note
I
D(DC)
±64
A
I
D(pulse)
±256
A
Total Power Dissipation (T
C
= 25°C)
P
T1
40
W
Total Power Dissipation
P
T2
1.0
W
Channel Temperature
T
ch
150
°C
Storage Temperature
T
stg
55 to +150
°C
Note
PW
≤
10
μ
s, Duty Cycle
≤
1%
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3639-ZK
TO-252 (MP-3ZK)
(TO-252)