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參數資料
| 型號： | 2SK3640-ZK |
| 廠商： | NEC Corp. |
| 英文描述： | SWITCHING N-CHANNEL POWER MOSFET |
| 中文描述： | 開關N溝道功率MOSFET |
| 文件頁數： | 1/8頁 |
| 文件大?。?/td> | 164K |
| 代理商： | 2SK3640-ZK |
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confirm that this is the latest version.
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MOS FIELD EFFECT TRANSISTOR
2SK3640
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No. D15968EJ3V0DS00 (3rd edition)
Date Published January 2005 NS CP(K)
Printed in Japan
The mark
shows major revised points.
2002
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3640-ZK
TO-252 (MP-3ZK)
DESCRIPTION
The 2SK3640 is N-channel MOS FET device that features a low
on-state resistance and excellent switching characteristics, and
designed for low voltage high current applications such as
DC/DC converter with synchronous rectifier.
FEATURES
Low on-state resistance
R
DS(on)1
= 21 m
MAX. (V
GS
= 10 V, I
D
= 9 A)
R
DS(on)2
= 40 m
MAX. (V
GS
= 4.5 V, I
D
= 9 A)
Low C
iss
: C
iss
= 570 pF TYP.
Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
30
V
Gate to Source Voltage (V
DS
= 0 V)
V
GSS
±16
V
Drain Current (DC) (T
C
= 25°C)
Drain Current (pulse)
Note1
I
D(DC)
±19
A
I
D(pulse)
±76
A
Total Power Dissipation (T
C
= 25°C)
P
T1
20
W
Total Power Dissipation
P
T2
1.0
W
Channel Temperature
T
ch
150
°C
Storage Temperature
Single Avalanche Current
Note2
Single Avalanche Energy
Note2
T
stg
–55 to +150
°C
I
AS
10
A
E
AS
10
mJ
Notes 1.
PW
≤
10
μ
s, Duty Cycle
≤
1%
2.
Starting T
ch
= 25°C, V
DD
= 15 V, R
G
= 25
, L = 100
μ
H, V
GS
= 20
→
0 V
(TO-252)
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SK3644-01SC | 制造商:Fuji Electric 功能描述: |
| 2SK3645-01MRSC | 制造商:Fuji Electric 功能描述: |
| 2SK3648-01SC | 制造商:Fuji Electric 功能描述: |
| 2SK364-BL(F) | 制造商:Toshiba 功能描述:Bulk |
| 2SK364-V(F) | 制造商:Toshiba 功能描述:Bulk |
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