參數(shù)資料
型號: 2SK3642
廠商: NEC Corp.
英文描述: SWITCHING N-CHANNEL POWER MOSFET
中文描述: 開關(guān)N溝道功率MOSFET
文件頁數(shù): 1/8頁
文件大?。?/td> 166K
代理商: 2SK3642
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MOS FIELD EFFECT TRANSISTOR
2SK3642
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No. D15970EJ4V0DS00 (4th edition)
Date Published January 2005 NS CP(K)
Printed in Japan
2002
The mark
shows major revised points.
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3642-ZK
TO-252 (MP-3ZK)
DESCRIPTION
The 2SK3642 is N-channel MOS FET device that features a low
on-state resistance and excellent switching characteristics, and
designed for low voltage high current applications such as
DC/DC converter with synchronous rectifier.
FEATURES
Low on-state resistance
R
DS(on)1
= 9.5 m
MAX. (V
GS
= 10 V, I
D
= 32 A)
R
DS(on)2
= 16 m
MAX. (V
GS
= 4.5 V, I
D
= 18 A)
Low C
iss
: C
iss
= 1100 pF TYP.
Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
30
V
Gate to Source Voltage (V
DS
= 0 V)
V
GSS
±20
V
Drain Current (DC) (T
C
= 25°C)
Drain Current (pulse)
Note1
I
D(DC)
±64
A
I
D(pulse)
±190
A
Total Power Dissipation (T
C
= 25°C)
P
T1
36
W
Total Power Dissipation
P
T2
1.0
W
Channel Temperature
T
ch
150
°C
Storage Temperature
Single Avalanche Current
Note2
Single Avalanche Energy
Note2
T
stg
–55 to + 150
°C
I
AS
25
A
E
AS
62
mJ
Notes 1.
PW
10
μ
s, Duty Cycle
1%
2.
Starting T
ch
= 25°C, V
DD
= 15 V, R
G
= 25
, L = 100
μ
H, V
GS
= 20
0 V
(TO-252)
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