參數(shù)資料
型號(hào)： 2SK3638
廠商： NEC Corp.
英文描述： SWITCHING N-CHANNEL POWER MOSFET
中文描述： 開(kāi)關(guān)N溝道功率MOSFET
文件頁(yè)數(shù)： 2/7頁(yè)
文件大小： 149K
代理商： 2SK3638
Data Sheet D15966EJ3V0DS
2
2SK3638
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 20 V, V
GS
= 0 V
10
μ
A
Gate Leakage Current
I
GSS
V
GS
= ±20 V, V
DS
= 0 V
±10
μ
A
Gate Cut-off Voltage
Forward Transfer Admittance
Note
V
GS(off)
V
DS
= 10 V, I
D
= 1 mA
1.5
2.5
V
| y
fs
|
V
DS
= 10 V, I
D
= 32 A
12
25
S
Drain to Source On-state Resistance
Note
R
DS(on)1
V
GS
= 10 V, I
D
= 32 A
6.8
8.5
m
R
DS(on)2
V
GS
= 4.5 V, I
D
= 18 A
10
15
m
Input Capacitance
C
iss
1100
pF
Output Capacitance
C
oss
450
pF
Reverse Transfer Capacitance
C
rss
V
DS
= 10 V
V
GS
= 0 V
f = 1 MHz
170
pF
Turn-on Delay Time
t
d(on)
10
ns
Rise Time
t
r
4.3
ns
Turn-off Delay Time
t
d(off)
35
ns
Fall Time
t
f
V
DD
= 10 V, I
D
= 32 A
V
GS
= 10 V
R
G
= 10
9.7
ns
Total Gate Charge
Q
G
22
nC
Gate to Source Charge
Q
GS
4.3
nC
Gate to Drain Charge
Body Diode Forward Voltage
Note
Q
GD
V
DD
= 16 V
V
GS
= 10 V
I
D
= 64 A
5.1
nC
V
F(S-D)
I
F
= 64 A, V
GS
= 0 V
1.0
V
Reverse Recovery Time
t
rr
I
F
= 64 A, V
GS
= 0 V
31
ns
Reverse Recovery Charge
Q
rr
di/dt = 100 A/
μ
s
23
nC
Note
Pulsed: PW
≤
350
μ
s, Duty Cycle
≤
2%
TEST CIRCUIT 2 GATE CHARGE
TEST CIRCUIT 1 SWITCHING TIME
PG.
R
G
0
V
GS
D.U.T.
R
L
V
DD
τ
= 1 s
Duty Cycle
≤
1%
τ
PG.
50
D.U.T.
R
L
V
DD
I
G
= 2 mA
GS
Wave Form
V
DS
Wave Form
V
GS
V
DS
10%
0
0
90%
90%
90%
V
GS
V
DS
t
on
t
off
t
d(on)
t
r
t
d(off)
t
f
10%
10%
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