The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
2002
MOS FIELD EFFECT TRANSISTOR
2SK3638
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No. D15966EJ3V0DS00 (3rd edition)
Date Published January 2005 NS CP(K)
Printed in Japan
The mark shows major revised points.
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3638-ZK
TO-252 (MP-3ZK)
DESCRIPTION
The 2SK3638 is N-channel MOS FET device that features a low
on-state resistance and excellent switching characteristics, and
designed for low voltage high current applications such as
DC/DC converter with synchronous rectifier.
FEATURES
Low on-state resistance
R
DS(on)1
= 8.5 m
MAX. (V
GS
= 10 V, I
D
= 32 A)
R
DS(on)2
= 15 m
MAX. (V
GS
= 4.5 V, I
D
= 18 A)
Low C
iss
: C
iss
= 1100 pF TYP.
Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
20
V
Gate to Source Voltage (V
DS
= 0 V)
V
GSS
±20
V
Drain Current (DC) (T
C
= 25°C)
Drain Current (pulse)
Note
I
D(DC)
±64
A
I
D(pulse)
±220
A
Total Power Dissipation (T
C
= 25°C)
P
T1
36
W
Total Power Dissipation
P
T2
1.0
W
Channel Temperature
T
ch
150
°C
Storage Temperature
T
stg
–55 to +150
°C
Note
PW
≤
10
μ
s, Duty Cycle
≤
1%
(TO-252)