參數(shù)資料
型號(hào): 2SK359
廠商: Hitachi,Ltd.
英文描述: Silicon N-Channel MOS FET
中文描述: 硅N溝道場(chǎng)效應(yīng)晶體管
文件頁(yè)數(shù): 4/7頁(yè)
文件大?。?/td> 31K
代理商: 2SK359
2SK359
4
0.5
2
20
1.0
10
5
0.2
Drain Current I
D
(mA)
100
50
20
10
5
2
1
Forward Transfer Admittance vs.
Drain Current
F
y
f
V
= 10 V
f = 1 kHz
2
10
20
5
1.0
0.5
Drain to Source Voltage V
DS
(V)
20
10
5
2
1.0
0.5
Input Capacitance vs.
Drain to Source Voltage
I
i
V
= 0
f = 1 MHz
0.5
2
10
20
5
1.0
Drain to Source Voltage V
DS
(V)
0.5
0.2
0.1
0.05
0.02
0.01
Reverse Transfer Capacitance vs.
Drain to Source Voltage
R
r
V
= 0
f = 1 MHz
0.5
2
20
5
1.0
10
Drain to Source Voltage V
DS
(V)
20
10
5
2
1.0
0.5
Output Capacitance vs.
Drain to Source Voltage
O
o
V
= 0
f = 1 MHz
相關(guān)PDF資料
PDF描述
2SK360 Silicon N-Channel MOS FET
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2SK3635 SWITCHING N-CHANNEL POWER MOSFET
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