參數(shù)資料
型號： 2SK359
廠商： Hitachi,Ltd.
英文描述： Silicon N-Channel MOS FET
中文描述： 硅N溝道場效應(yīng)晶體管
文件頁數(shù)： 2/7頁
文件大?。?/td> 31K
代理商： 2SK359
2SK359
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSX
*
1
V
GSS
I
D
I
G
Pch
20
V
Gate to source voltage
±
5
V
Drain current
30
mA
Gate current
±
1
mA
Channel power dissipation
400
mW
Channel temperature
Tch
150
°
C
°
C
Storage temperature
Note:
1. V
GS
= –4 V
Tstg
–55 to +150
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSX
20
—
—
V
I
D
= 100
μ
A, V
GS
= –4 V
Gate cutoff current
I
GSS
I
DSS
*
1
V
GS(off)
—
—
±
20
nA
V
GS
=
±
5 V, V
DS
= 0
V
DS
= 10 V, V
GS
= 0
V
DS
= 10 V, I
D
= 10
μ
A
V
= 10 V, V
GS
= 0,
f = 1 kHz
Drain current
4
—
12
mA
Gate to source cutoff voltage
0
—
–2.0
V
Forward transfer admittance
fs
y
8
14
—
mS
Input capacitance
Ciss
—
2.5
—
pF
V
= 10 V, V
GS
= 0,
f = 1 MHz
Output capacitance
Coss
—
1.6
—
pF
Reverse transfer capacitance
Crss
—
0.03
—
pF
Power gain
PG
—
30
—
dB
V
= 10 V, V
GS
= 0,
f = 100 MHz
Noise figure
Note:
D
NF
—
2
—
dB
1. The 2SK359 is grouped by I
DSS
as follows.
E
F
4 to 8
6 to 10
8 to 12
相關(guān)PDF資料
PDF描述
2SK360 Silicon N-Channel MOS FET
2SK3635-Z SWITCHING N-CHANNEL POWER MOSFET
2SK3635 SWITCHING N-CHANNEL POWER MOSFET
2SK3638 SWITCHING N-CHANNEL POWER MOSFET
2SK3638-ZK SWITCHING N-CHANNEL POWER MOSFET
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