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參數(shù)資料
| 型號(hào)： | 2SK3503 |
| 廠商： | NEC Corp. |
| 英文描述： | N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING |
| 中文描述： | N溝道MOS場(chǎng)效應(yīng)晶體管高速開關(guān) |
| 文件頁(yè)數(shù)： | 4/5頁(yè) |
| 文件大小： | 114K |
| 代理商： | 2SK3503 |
Data Sheet D15395EJ2V0DS
4
2SK3503
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
R
D
V
GS
- Gate to Source Voltage - V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
R
D
V
GS
- Gate to Source Voltage - V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
R
D
V
GS
- Gate to Source Voltage - V
SOURCE TO DRAIN DIODE FORWARD
VOLTAGE
I
S
V
SD
- Source to Drain Voltage - V
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
C
i
,
r
,
o
,
V
DS
- Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
t
d
,
r
,
d
,
f
I
D
- Drain Current - mA
1
30
0
2
3
4
7
20
10
6
5
T
= – 25C
Pulsed
I
D
= 10 mA
1 mA
1
30
0
2
3
4
7
20
10
6
5
I
D
= 10 mA
1 mA
1
30
0
2
3
4
7
20
10
6
5
I
D
= 10 mA
1 mA
200
0
1.0
100
50
20
10
5
2
1
0.8
0.6
0.4
0.2
1
50
0.5
2
5
10
50
10
5
20
V
GS
= 0 V
f = 1 MHz
20
2
1
C
oss
C
iss
C
rss
20
500
10
50
100
500
200
50
200
V
DD
= 3.0 V
V
GS
= 3.0 V
R
G
= 10
100
20
t
r
t
f
t
d(on)
t
d(off)
T
= 25C
Pulsed
T
A
= 75C
Pulsed
V
GS
= 0 V
Pulsed
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