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參數(shù)資料
| 型號： | 2SK3503 |
| 廠商： | NEC Corp. |
| 英文描述： | N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING |
| 中文描述： | N溝道MOS場效應(yīng)晶體管高速開關(guān) |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 114K |
| 代理商： | 2SK3503 |
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confirm that this is the latest version.
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sales representative for availability and additional information.
2001
MOS FIELD EFFECT TRANSISTOR
2SK3503
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR HIGH SPEED SWITCHING
DATA SHEET
Document No. D15395EJ2V0DS00 (2nd edition)
Date Published November 2004 NS CP(K)
Printed in Japan
The mark
shows major revised points.
EQUIVALENT CIRCUIT
Drain
Source
Body
Diode
Gate
Protection
Diode
Gate
DESCRIPTION
The 2SK3503 is an N-channel vertical MOS FET. Because it can be
driven by a voltage as low as 1.5 V and it is not necessary to consider
a drive current, this FET is ideal as an actuator for low-current portable
systems such as headphone stereos and video cameras.
FEATURES
Automatic mounting supported
Gate can be driven by a 1.5 V power source
Because of its high input impedance, there’s no need to
consider a drive current
Since bias resistance can be omitted, the number of
components required can be reduced
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3503
SC-75 (USM)
Marking: E1
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
=
0 V)
V
DSS
16
V
Gate to Source Voltage (V
DS
=
0 V)
V
GSS
±7.0
V
Drain Current (DC) (Tc = 25°C)
Drain Current (pulse)
Note1
Total Power Dissipation (T
C
= 25°C)
Note2
I
D(DC)
±0.1
A
I
D(pulse)
±0.4
A
P
T
200
mW
Channel Temperature
T
ch
150
°C
Storage Temperature
Notes 1.
PW
≤
10
μ
s, Duty Cycle
≤
1%
2.
Mounted on ceramic substrate of 3.0 cm
2
×
0.64 mm
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
T
stg
–55 to +150
°C
PACKAGE DRAWING (Unit: mm)
0.3
1
0
2
0.2
+0.1
–0
0.5
1: Source
2: Gate
3: Drain
0.5
1.0
1.6 ± 0.1
3
1
0.6
0.75 ± 0.05
0 to 0.1
0.15
+0.1
+0.1
–0
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK3505 | N CHANNEL SILICON POWER MOSFET |
| 2SK3505-01 | N CHANNEL SILICON POWER MOSFET |
| 2SK3505-01MR | N CHANNEL SILICON POWER MOSFET |
| 2SK3510 | SWITCHING N-CHANNEL POWER MOSFET |
| 2SK3510-S | SWITCHING N-CHANNEL POWER MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3503-T1-A | 制造商:Renesas Electronics 功能描述:Nch 16V 100mA 12 SC75 Cut Tape |
| 2SK3504-01 | 制造商:Fuji Electric 功能描述:MOSFET, Power;N-Ch;VDSS 500V;RDS(ON) 0.35Ohm;ID +/-16A;TO-220AB;PD 225W;VGS +/-3 |
| 2SK3504-01SC | 制造商:Fuji Electric 功能描述: |
| 2SK3505 | 制造商:Distributed By MCM 功能描述:500V 16A 80W Gds Fuji Fet TO-220Ab N-Channel |
| 2SK3505-01MRSC-P | 制造商:Fuji Electric 功能描述: |
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