- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄370115 > 2SK3510 (NEC Corp.) SWITCHING N-CHANNEL POWER MOSFET PDF資料下載
參數(shù)資料
| 型號： | 2SK3510 |
| 廠商： | NEC Corp. |
| 英文描述： | SWITCHING N-CHANNEL POWER MOSFET |
| 中文描述： | 開關(guān)N溝道功率MOSFET |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 87K |
| 代理商： | 2SK3510 |
2001
MOS FIELD EFFECT TRANSISTOR
2SK3510
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No.
Date Published
Printed in Japan
D15687EJ1V0DS00 (1st edition)
May 2002 NS CP(K)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
DESCRIPTION
The 2SK3510 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
Super low on-state resistance:
R
DS(on)
= 8.5
m
MAX. (V
GS
= 10
V, I
D
= 42
A)
Low C
iss
: C
iss
= 8500
pF TYP.
Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25°C)
Drain Current (pulse)
Note1
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
75
±
20
±
83
±
332
125
1.5
150
V
V
A
A
W
W
°C
°C
Total Power Dissipation (T
C
= 25°C)
Total Power Dissipation (T
A
= 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current
Note2
Single Avalanche Energy
Note2
–55 to +150
I
AS
E
AS
69
450
A
mJ
Notes 1.
PW
≤
10
μ
s, Duty Cycle
≤
1%
2.
Starting T
ch
= 25°C, V
DD
= 35 V, R
G
= 25
,
V
GS
= 20
→
0 V
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3510
TO-220AB
2SK3510-S
TO-262
2SK3510-ZJ
TO-263
2SK3510-Z
TO-220SMD
Note
Note
TO-220SMD package is produced only
in Japan.
(TO-220AB)
(TO-262)
(TO-263, TO-220SMD)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK3510-S | SWITCHING N-CHANNEL POWER MOSFET |
| 2SK3510-Z | SWITCHING N-CHANNEL POWER MOSFET |
| 2SK3510-ZJ | SWITCHING N-CHANNEL POWER MOSFET |
| 2SK3541 | Small switching (30V, 0.1A) |
| 2SK3566 | Silicon N-Channel MOS FET, High Speed Power Switching |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3510-AZ | 功能描述:MOSFET N-CH 75V MP-25/TO-220 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| 2SK3511(AZ) | 制造商:Renesas Electronics 功能描述:Cut Tape |
| 2SK3511-AZ | 功能描述:MOSFET N-CH 75V MP-25/TO-220 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| 2SK3512-01LSC | 制造商:Fuji Electric 功能描述: |
| 2SK3513-01LSC | 制造商:Fuji Electric 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。