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參數(shù)資料
| 型號： | 2SK3510-S |
| 廠商： | NEC Corp. |
| 英文描述： | SWITCHING N-CHANNEL POWER MOSFET |
| 中文描述： | 開關N溝道功率MOSFET |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 87K |
| 代理商： | 2SK3510-S |
2001
MOS FIELD EFFECT TRANSISTOR
2SK3510
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No.
Date Published
Printed in Japan
D15687EJ1V0DS00 (1st edition)
May 2002 NS CP(K)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
DESCRIPTION
The 2SK3510 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
Super low on-state resistance:
R
DS(on)
= 8.5
m
MAX. (V
GS
= 10
V, I
D
= 42
A)
Low C
iss
: C
iss
= 8500
pF TYP.
Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25°C)
Drain Current (pulse)
Note1
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
75
±
20
±
83
±
332
125
1.5
150
V
V
A
A
W
W
°C
°C
Total Power Dissipation (T
C
= 25°C)
Total Power Dissipation (T
A
= 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current
Note2
Single Avalanche Energy
Note2
–55 to +150
I
AS
E
AS
69
450
A
mJ
Notes 1.
PW
≤
10
μ
s, Duty Cycle
≤
1%
2.
Starting T
ch
= 25°C, V
DD
= 35 V, R
G
= 25
,
V
GS
= 20
→
0 V
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3510
TO-220AB
2SK3510-S
TO-262
2SK3510-ZJ
TO-263
2SK3510-Z
TO-220SMD
Note
Note
TO-220SMD package is produced only
in Japan.
(TO-220AB)
(TO-262)
(TO-263, TO-220SMD)
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