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參數(shù)資料
| 型號(hào)： | 2SK3371(2-7J1B) |
| 元件分類： | JFETs |
| 英文描述： | 1 A, 600 V, 9 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, 2-7J1B, 3 PIN |
| 文件頁(yè)數(shù)： | 6/6頁(yè) |
| 文件大小： | 214K |
| 代理商： | 2SK3371(2-7J1B) |
2SK3371
2004-07-06
6
The information contained herein is subject to change without notice.
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
and sold, under any law and regulations.
030619EAA
RESTRICTIONS ON PRODUCT USE
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| 2SK3372 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon N-Channel Junction |
| 2SK33720RL | 功能描述:JFET N-CH 20V 2MA SSS-MINI-3P RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> JFET（結(jié)點(diǎn)場(chǎng)效應(yīng) 系列:- 標(biāo)準(zhǔn)包裝:8,000 系列:- 電流 - 漏極(Idss) @ Vds (Vgs=0):1.2mA @ 10V 漏極至源極電壓(Vdss):30V 漏極電流 (Id) - 最大:10mA FET 型:N 溝道 電壓 - 擊穿 (V(BR)GSS):- 電壓 - 切斷 (VGS 關(guān)）@ Id:180mV @ 1µA 輸入電容 (Ciss) @ Vds:4pF @ 10V 電阻 - RDS（開(kāi)）:200 歐姆 安裝類型:表面貼裝 包裝:帶卷 (TR) 封裝/外殼:3-XFDFN 供應(yīng)商設(shè)備封裝:3-ECSP1006 功率 - 最大:100mW |
| 2SK33720SL | 功能描述:JFET N-CH 20V 2MA SSS-MINI-3P RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> JFET（結(jié)點(diǎn)場(chǎng)效應(yīng) 系列:- 標(biāo)準(zhǔn)包裝:8,000 系列:- 電流 - 漏極(Idss) @ Vds (Vgs=0):1.2mA @ 10V 漏極至源極電壓(Vdss):30V 漏極電流 (Id) - 最大:10mA FET 型:N 溝道 電壓 - 擊穿 (V(BR)GSS):- 電壓 - 切斷 (VGS 關(guān)）@ Id:180mV @ 1µA 輸入電容 (Ciss) @ Vds:4pF @ 10V 電阻 - RDS（開(kāi)）:200 歐姆 安裝類型:表面貼裝 包裝:帶卷 (TR) 封裝/外殼:3-XFDFN 供應(yīng)商設(shè)備封裝:3-ECSP1006 功率 - 最大:100mW |
| 2SK33720TL | 功能描述:JFET N-CH 20V 2MA SSS-MINI-3P RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> JFET（結(jié)點(diǎn)場(chǎng)效應(yīng) 系列:- 標(biāo)準(zhǔn)包裝:8,000 系列:- 電流 - 漏極(Idss) @ Vds (Vgs=0):1.2mA @ 10V 漏極至源極電壓(Vdss):30V 漏極電流 (Id) - 最大:10mA FET 型:N 溝道 電壓 - 擊穿 (V(BR)GSS):- 電壓 - 切斷 (VGS 關(guān)）@ Id:180mV @ 1µA 輸入電容 (Ciss) @ Vds:4pF @ 10V 電阻 - RDS（開(kāi)）:200 歐姆 安裝類型:表面貼裝 包裝:帶卷 (TR) 封裝/外殼:3-XFDFN 供應(yīng)商設(shè)備封裝:3-ECSP1006 功率 - 最大:100mW |
| 2SK33720UL | 功能描述:JFET N-CH 20V 2MA SSS-MINI-3P RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> JFET（結(jié)點(diǎn)場(chǎng)效應(yīng) 系列:- 標(biāo)準(zhǔn)包裝:8,000 系列:- 電流 - 漏極(Idss) @ Vds (Vgs=0):1.2mA @ 10V 漏極至源極電壓(Vdss):30V 漏極電流 (Id) - 最大:10mA FET 型:N 溝道 電壓 - 擊穿 (V(BR)GSS):- 電壓 - 切斷 (VGS 關(guān)）@ Id:180mV @ 1µA 輸入電容 (Ciss) @ Vds:4pF @ 10V 電阻 - RDS（開(kāi)）:200 歐姆 安裝類型:表面貼裝 包裝:帶卷 (TR) 封裝/外殼:3-XFDFN 供應(yīng)商設(shè)備封裝:3-ECSP1006 功率 - 最大:100mW |
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