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參數(shù)資料
| 型號： | 2SK3371(2-7J1B) |
| 元件分類： | JFETs |
| 英文描述： | 1 A, 600 V, 9 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, 2-7J1B, 3 PIN |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 214K |
| 代理商： | 2SK3371(2-7J1B) |
2SK3371
2004-07-06
2
Electrical Characteristics (Ta
= 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±25 V, VDS = 0 V
±10
A
Gate-source breakdown voltage
V (BR) GSS
IG = ±10 A, VDS = 0 V
±30
V
Drain cut-off current
IDSS
VDS = 600 V, VGS = 0 V
100
A
Drain-source breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
600
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
2.0
4.0
V
Drain-source ON resistance
RDS (ON)
VGS = 10 V, ID = 0.5 A
6.4
9.0
Forward transfer admittance
Yfs
VDS = 10 V, ID = 0.5 A
0.4
0.85
S
Input capacitance
Ciss
190
Reverse transfer capacitance
Crss
15
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
55
pF
Rise time
tr
12
Turn-on time
ton
55
Fall time
tf
40
Switching time
Turn-off time
toff
90
ns
Total gate charge
(gate-source plus gate-drain)
Qg
9
Gate-source charge
Qgs
3.5
Gate-drain (“miller”) charge
Qgd
VDD 400 V, VGS = 10 V, ID = 1 A
5.5
nC
Source-Drain Diode Ratings and Characteristics (Ta
= 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
IDR
1
A
Pulse drain reverse current
IDRP
2
A
Diode forward voltage
VDSF
IDR = 1 A, VGS = 0 V
1.7
V
Reverse recovery time
trr
400
ns
Reverse recovery charge
Qrr
IDR = 1 A, VGS = 0 V,
dIDR/dt = 100 A/s
1.4
C
Marking
Duty <= 1%, tw = 10 s
0 V
10 V
VGS
RL = 600
VDD 300 V
ID = 0.5 A VOUT
50
K3371
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Part No. (or abbreviation code)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3372 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon N-Channel Junction |
| 2SK33720RL | 功能描述:JFET N-CH 20V 2MA SSS-MINI-3P RoHS:是 類別:分離式半導體產(chǎn)品 >> JFET（結(jié)點場效應(yīng) 系列:- 標準包裝:8,000 系列:- 電流 - 漏極(Idss) @ Vds (Vgs=0):1.2mA @ 10V 漏極至源極電壓(Vdss):30V 漏極電流 (Id) - 最大:10mA FET 型:N 溝道 電壓 - 擊穿 (V(BR)GSS):- 電壓 - 切斷 (VGS 關(guān)）@ Id:180mV @ 1µA 輸入電容 (Ciss) @ Vds:4pF @ 10V 電阻 - RDS（開）:200 歐姆 安裝類型:表面貼裝 包裝:帶卷 (TR) 封裝/外殼:3-XFDFN 供應(yīng)商設(shè)備封裝:3-ECSP1006 功率 - 最大:100mW |
| 2SK33720SL | 功能描述:JFET N-CH 20V 2MA SSS-MINI-3P RoHS:是 類別:分離式半導體產(chǎn)品 >> JFET（結(jié)點場效應(yīng) 系列:- 標準包裝:8,000 系列:- 電流 - 漏極(Idss) @ Vds (Vgs=0):1.2mA @ 10V 漏極至源極電壓(Vdss):30V 漏極電流 (Id) - 最大:10mA FET 型:N 溝道 電壓 - 擊穿 (V(BR)GSS):- 電壓 - 切斷 (VGS 關(guān)）@ Id:180mV @ 1µA 輸入電容 (Ciss) @ Vds:4pF @ 10V 電阻 - RDS（開）:200 歐姆 安裝類型:表面貼裝 包裝:帶卷 (TR) 封裝/外殼:3-XFDFN 供應(yīng)商設(shè)備封裝:3-ECSP1006 功率 - 最大:100mW |
| 2SK33720TL | 功能描述:JFET N-CH 20V 2MA SSS-MINI-3P RoHS:是 類別:分離式半導體產(chǎn)品 >> JFET（結(jié)點場效應(yīng) 系列:- 標準包裝:8,000 系列:- 電流 - 漏極(Idss) @ Vds (Vgs=0):1.2mA @ 10V 漏極至源極電壓(Vdss):30V 漏極電流 (Id) - 最大:10mA FET 型:N 溝道 電壓 - 擊穿 (V(BR)GSS):- 電壓 - 切斷 (VGS 關(guān)）@ Id:180mV @ 1µA 輸入電容 (Ciss) @ Vds:4pF @ 10V 電阻 - RDS（開）:200 歐姆 安裝類型:表面貼裝 包裝:帶卷 (TR) 封裝/外殼:3-XFDFN 供應(yīng)商設(shè)備封裝:3-ECSP1006 功率 - 最大:100mW |
| 2SK33720UL | 功能描述:JFET N-CH 20V 2MA SSS-MINI-3P RoHS:是 類別:分離式半導體產(chǎn)品 >> JFET（結(jié)點場效應(yīng) 系列:- 標準包裝:8,000 系列:- 電流 - 漏極(Idss) @ Vds (Vgs=0):1.2mA @ 10V 漏極至源極電壓(Vdss):30V 漏極電流 (Id) - 最大:10mA FET 型:N 溝道 電壓 - 擊穿 (V(BR)GSS):- 電壓 - 切斷 (VGS 關(guān)）@ Id:180mV @ 1µA 輸入電容 (Ciss) @ Vds:4pF @ 10V 電阻 - RDS（開）:200 歐姆 安裝類型:表面貼裝 包裝:帶卷 (TR) 封裝/外殼:3-XFDFN 供應(yīng)商設(shè)備封裝:3-ECSP1006 功率 - 最大:100mW |
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