參數(shù)資料
型號: 2SK3359-S
廠商: NEC Corp.
元件分類: MOSFETs
英文描述: Switching N-channel power MOS FET industrial use
中文描述: N溝道 開關(guān)功率場效應(yīng)晶體管 工業(yè)級
文件頁數(shù): 2/4頁
文件大小: 48K
代理商: 2SK3359-S
Preliminary Data Sheet D14323EJ1V0DS00
2
2SK3359
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Drain to Source On-state Resistance
R
DS(on)1
V
GS
= 10
V, I
D
= 35
A
14
20
m
R
DS(on)2
V
GS
= 4.5
V, I
D
= 30
A
19
28
m
Gate to Source Cut-off Voltage
V
GS(off)
V
DS
= 10
V, I
D
= 250
μ
A
1.5
2.0
2.5
V
Forward Transfer Admittance
| y
fs
|
V
DS
= 10 V, I
D
= 35 A
23
47
S
Drain Leakage Current
I
DSS
V
DS
= 100
V, V
GS
= 0
V
10
μ
A
Gate to Source Leakage Current
I
GSS
V
GS
=
±
20
V, V
DS
= 0
V
±
10
μ
A
Input Capacitance
C
iss
V
DS
= 10
V
4900
pF
Output Capacitance
C
oss
V
GS
= 0
V
990
pF
Reverse Transfer Capacitance
C
rss
f = 1
MHz
580
pF
Turn-on Delay Time
t
d(on)
I
D
= 35
A
58
ns
Rise Time
t
r
V
GS(on)
= 10
V
400
ns
Turn-off Delay Time
t
d(off)
V
DD
= 50
V
340
ns
Fall Time
t
f
R
G
= 10
340
ns
Total Gate Charge
Q
G
I
D
= 70
A
130
nC
Gate to Source Charge
Q
GS
V
DD
= 80
V
14
nC
Gate to Drain Charge
Q
GD
V
GS(on)
= 10
V
50
nC
Body Diode Forward Voltage
V
F(S-D)
I
F
= 70
A, V
GS
= 0
V
1.0
V
Reverse Recovery Time
t
rr
I
F
= 70
A, V
GS
= 0
V
170
ns
Reverse Recovery Charge
Q
rr
di/dt = 100
A
/
μ
s
920
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
R
G
= 25
50
PG.
L
V
DD
V
GS
= 20
0 V
BV
DSS
I
AS
I
D
V
DS
Starting T
ch
V
DD
D.U.T.
TEST CIRCUIT 3 GATE CHARGE
TEST CIRCUIT 2 SWITCHING TIME
PG.
R
G
0
V
GS
D.U.T.
R
L
V
DD
τ
= 1
s
Duty Cycle
1 %
μ
V
GS
Wave Form
I
D
Wave Form
V
GS
10 %
90 %
V
GS
(on)
10 %
0
I
D
90 %
90 %
t
d(on)
t
r
t
d(off)
t
f
10 %
τ
I
D
0
t
on
t
off
PG.
50
D.U.T.
R
L
V
DD
I
G
= 2 mA
#
#
#
#
#
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